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REACTION SINTERING OF MAGNESIUM SILICIDE THERMOELE…
Author:HANLiqin YANGMeijun SHENQiang ZHANGLianmeng(StateK… WuhanUniversityofTec… Wuhan430070 China) 
Unit: 
Keyword:magnesium silicide spark plasma sintering reaction sintering thermoelectric material 
Classification:TF124.5
Year,volume(Issue):page number:2008,36(3):337-340
Summary:

Magnesium silicide (Mg2Si) is one kind of narrow-band-gap n-type semiconductor, and is a promising environmentally friendly thermoelectric material because of its high electrical conductivity and low thermal conductivity, and also because it is non-toxic and non-polluting. High-purity magnesium (Mg) and silicon (Si) powders were selected as the raw materials, and fabrication of the Mg2Si thermoelectric material was systematically explored using the spark plasma sintering technique. The densities of the specimens were tested, and the phases and microstructures of the specimen were analyzed by X-ray diffraction and field emission scanning electron microscope, respectively. The results show that the synthesis temperature for Mg and Si is 823 K, 30 min and excessive content of Mg is helpful for obtaining pure Mg2Si. The relative density can reach 97% when the sample is prepared under the conditions of 823 K, 250 MPa, 30 min, but cracks were found on the surface of the sample. The sample was prepared under the conditions of 823 K, 6 MPa, 10 min, and then re-sintering at 1 023 K, 20 MPa, 10 min Mg2Si bulk with fine structure and relative density of 98% was obtained.

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Foundation item:
国家重点基础研究发展计划(2007CB607501)资助项目
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References:

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