HomeAbout JournalEditorial BoardSubscriptionsContacts UsCHINESE
Home >> MagazineArticle
Effect of Deposition Temperature on Structural and…
Year,volume(Issue):page number:2018,46(10):0-0
Foundation item:
About The Author:

 [1] SCOTT J F. Application of modern ferroelectrics[J]. Science, 2007, 315: 954?959.

[2] ZHU M, DU Z, LIU Q, et al. Ferroelectric BiFeO3 thin-film optical modulators[J]. Appl Phys Lett, 2016, 108: 233502. 
[3] PAN H, ZENG Y, SHEN Y, et al. BiFeO3-SrTiO3thin film as a new lead-free relaxor-ferroelectric capacitor with ultrahigh energy storage performance[J]. J Mater Chem A, 2017, 5(12): 5920?5926. 
[4] ZHANG T, LI W, CAO W, et al. Giant electrocaloric effect in PZT bilayer thin films by utilizing the electric field engineering[J]. Appl Phys Lett, 2016, 108(16): 162902.
[5] KATSOURAS I, ASADI K, GROEN W A, et al. Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage[J]. Appl Phys Lett, 2016, 108(23): 232907.
[6] GOBELJIC D, SHVARTSMAN V V, BELIANINOV A, et al. Nanoscale mapping of heterogeneity of the polarization reversal in lead-free relaxor–ferroelectric ceramic composites[J]. Nanoscale, 2016, 8(4): 2168?2176.
[7] SMOLENSKII G A, ISUPOV V A, AGRANOVSKAYA A I, et al. New ferroeleetrics complex composition[J]. Sov Phys Solid State, 1961, 2: 2651?2654.
[8] CAO W, LI W, FENG Y, et al. Defect dipole induced large recoverable strain and high energy-storage density in lead-free Na0.5Bi0.5TiO3-based systems[J]. Appl Phys Lett, 2016, 108(20): 202902.
[9] BALAKT A M, SHAW C P, ZHANG Q. Enhancement of pyroelectric properties of lead-free 0.94Na0.5Bi0.5TiO3–0.06BaTiO3 ceramics by La doping. [J]. J Eur Ceram Soc, 2017, 37(4): 1459?1466.
[10] TANG X G, WANG J, WANG X X, et al. Preparation and electrical properties of highly (111)–oriented (Na0.5Bi0.5)TiO3 thin films by a sol-gel process[J]. Chem Mater, 2004, 16(25): 5293?5296.
[11] REMONDI F, MALIC B, KOSEC M, et al. Synthesis and crystallization pathway of Na0.5Bi0.5TiO3 thin film obtained by a modified sol-gel route[J]. J Eur Ceram Soc, 2007, 27(13): 4363?4366. 
[12] ZHOU Z H, XUE J M, LI W Z, et al. Leakage current and charge carriers in Na0.5Bi0.5TiO3 thin film[J]. J Phys D: Appl Phys, 2005, 38: 642?648.
[13] DARYAPURKAR A S, KOLTE J T, GOPALAN P. Influence of oxygen gas pressure on phase, microstructure and electrical properties of sodium bismuth titanate thin films grown using pulsed laser deposition[J]. Thin Solid Films, 2015, 579: 44?49.
[14] BOUSQUET M, DUCLERE J R, ORHAN E, et al. Macroscopic and nanoscale electrical properties of pulsed laser deposited (100) epitaxial lead-free Na0.5Bi0.5TiO3 thin films[J]. J Appl Phys, 2010, 107: 034102.
[15] BOUSQUET M, DUCLERE J R, GAUTIER B, et al. Electrical properties of (110) epitaxial lead-free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition: Macroscopic and nanoscale data[J]. J Appl Phys, 2012, 111: 104106.
[16] ZHOU Z H, XUE J M, LI W Z, et al. Ferroelectric and electrical behavior of (Na0.5Bi0.5)TiO3 thin films[J]. Appl Phys Lett, 2004, 85(5): 804?806.
[17] XU J, LIU Y, WITHERS R L, et al. Ferroelectric and non-linear dielectric characteristics of Bi0.5Na0.5TiO3 thin films deposited via a metallorganic decomposition process[J]. J Appl Phys, 2008, 104(11): 116101.
[18] STEWART M, LEPADATU S, MCCARTNEY L N, et al. Electrode size and boundary condition independent measurement of the effective piezoelectric coefficient of thin films[J]. APL Mater, 2015, 3(2): 026103.
[19] YANG Y C, SONG C, WANG X H, et al. Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films[J]. Appl Phys Lett, 2008, 92(1): 012907.
[20] HOSHINA T, KIGOSHI Y, HATTA S, et al. Domain contribution to dielectric properties of fine-grained BaTiO3 ceramics[J]. Jpn J Appl Phys, 2009, 48(9): 09KC1.
[21] HIRUMA Y, NAGATA H, TAKENAKA T. Thermal depoling process and piezoelectric properties of bismuth sodium titanate ceramics[J]. J Appl Phys, 2009, 105: 084112.
[22] TAYLOR D V, DAMJANOVIC D. Piezoelectric properties of rhombohedral Pb(Zr,Ti)O3 thin films with (100), (111), and “random” crystallographic orientation[J]. Appl Phys Lett, 2000, 76: 1615?1617.
[23] KHOLKIN A L, AKDOGAN E K, SAFARI A, et al. Characterization of the effective electrostriction coefficients in ferroelectric thin films[J]. J Appl Phys, 2001, 89(12): 8066?8073.
Service and feedback:
Article download】【Add to Wishlist
Editorial Department of Journal of the Chinese Ceramic Society
Address: No.11 Sanlihe Road, Beijing, China    P.C.:100831