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生长温度对单晶衬底上生长Ba(Zr_(0.2)Ti_(0.8))O_3薄膜微结构和介电性能的影响(英文)
作者:接文静 张鹰  
单位:西南科技大学国防科技学院 电子科技大学微电子与固体电子学院  
关键词:锆钛酸钡  薄膜  脉冲激光沉积  生长温度  介电性能 
分类号:TB383.2
出版年,卷(期):页码:2009,37(8):1424-1428
DOI:
摘要:

采用脉冲激光沉积方法,在制备有LaNiO3(LNO)底电极的LaAlO3(LAO)衬底上,分别在500,600℃和700℃的沉积温度下制备了锆钛酸钡Ba(Zr0.2Ti0.8)O3(BZT)薄膜。通过X射线衍射表征薄膜的结构特性,原子力显微镜和扫描电子显微镜分别用来表征样品的表面和断面形貌。结果表明:BZT薄膜与LNO具有c轴取向,并以cube-on-cube方式排列生长。BZT薄膜表面致密无裂缝,具有柱状生长的晶粒。薄膜的介电性能测试显示:600℃下沉积的BZT薄膜具有较高的介电可调性(49.1%)和较低的介电损耗(2.5%)。在600℃下沉积的BZT薄膜的优值因子(figure of merit,FOM)达到19.8。

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Ba(Zr0.2Ti0.8)O3 (BZT) thin films were prepared by pulsed laser deposition (PLD) at 500, 600 and 700 ℃ on single crystal oxide substrates LaAlO3(LAO) with conductive oxide bottom electrodes LaNiO3(LNO), respectively. The structure of the films was characterized by X-ray diffraction. The surface morphology and cross-sectional morphology of BZT thin films were detected by atomic force microscopy and scanning electron microscopy. The results indicate that the BZT dielectric films and the bottom electrode could be c-axial oriented with a cube-on-cube arrangement. The BZT thin films exhibite a crack-free and dense surface and columnar grains. The dielectric properties measured with parallel-plate capacitor configurations indicate that BZT thin film grown at 600 ℃ exhibits higher dielectric tunability (49.1%) and lower dielectric loss (2.5%). The figure of merit (FOM) value is improved to 19.8 when BZT thin film is prepared at 600 ℃ on LAO substrates with LNO bottom electrode.

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基金项目:
supported by Youth Foundation of Southwest University of Science and Technology No09zx3112~~
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参考文献:

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