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等离子活化烧结制备SiC/h-BN复相陶瓷
作者:李红伟 张琴 金志浩 王继平  
单位:西安交通大学金属材料强度国家重点实验室  
关键词:等离子活化烧结  热压烧结  碳化硅  氮化硼  弱界面 
分类号:TQ174.6
出版年,卷(期):页码:2009,37(11):1808-1812
DOI:
摘要:

采用等离子活化烧结(plasma activated sintering,PAS)制备SiC/20%(体积分数)h-BN复相陶瓷,研究了烧结工艺对复相陶瓷密度、抗弯强度、硬度,以及显微结构的影响,并对比分析了PAS与热压(hot-pressing,HP)烧结工艺不同烧结机理。结果表明:在1600℃保温3min PAS烧结与在1850℃保温1h HP烧结制备出的SiC/20% h-BN复相陶瓷具有相近的性能和微观结构,PAS烧结效率远高于HP。当引入20%微米级h-BN在烧结过程中抑制SiC晶粒长大,PAS快速烧结细化晶粒的效应在烧结SiC/20% h-BN复相陶瓷时被抑制。

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SiC/20%(volume fraction) h-BN composite ceramics were fabricated by the hot pressing(HP) and plasma activated sintering(PAS) methods.The density,Vickers hardness,and bending strength of the composites were tested.The microstructures and phase compositions of the composites were identified by scanning electron microscopy and X-ray diffraction.The comparison and optimized mechanism of HP and PAS were investigated.The results show that the performance of composite fabricated at 1 600 ℃ for 3 min by PAS is similar to that of composite fabricated at 1 850 ℃ for 1 h by HP;the sintering efficiency of PAS is much greater than that of HP.With 20% micrometer h-BN,the h-BN on the crystal boundary of SiC grains can inhibit the growth of SiC grain,so the effect of inhibiting grain growth in PAS rapid sintering is restrained.

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参考文献:

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