[1]WALTEREITP,BRANDTO,TRAMPERTA,etal.Nitride semiconductorsfreeofelectrostaticfieldsforefficientwhitelight emittingdiodes[J].Nature,2000,406:865—867.
[2]KANGS,DOOLITTLEWA,BROWNAS,etal.Electri calandstructuralcharacterizationofAlxGa1-xN/GaNhetero structuresgrownonLiGaO2substrate[J].ApplPhysLett,1999,74(22):3380—3382.
[3]JOHNSONMAL,HUGHESWC,ROWLANDWH,et al.GrowthofGaN,andAlGaNfilmsandquantumwellsub stratesbymolecularbeamepitaxy[J].JCrystGrowth,1997,175/176:72—78.
[4]KUNGP,SAXLERA,ZHANX,etal.Metalorganicchemi calvapordepositionofmonocrystallineGaNthinfilmsonLiGaO2substrate[J].ApplPhysLett,1996,69(14):2116—2118.
[5]ISHIIT,TAZOHY,MIYAZAWAS.LiGaO2singlecrystal asalattice matchedsubstrateforhexagonalGaNthinfilms[J].JCrystGrowth,1998,189/190:208—212.
[6]NGHM.Molecular beamepitaxyofGaN/AlxGa1-xNmulti plequantumwellsonR plane(1012)sapphiresubstrates[J].ApplPhysLett,2002,80(23):4369—4371.
[7]徐科,邓佩珍,徐军,等.新型蓝光衬底材料LiAlO2晶体的生长和缺陷分析[J].光学学报,1998,18:381—384.XUKe,DENGPeizhen,XUJun,etal.ActaOptSinica(in Chinese),1998,18:381—384.
[8]邹军,彭观良,陈俊华,等.γLiAlO2晶体生长挥发和腐蚀研究[J].人工晶体学报,2004,33(6):991—995.ZOUJun,PENGGuanliang,CHENJunhua,etal.JSynth Cryst(inChinese),2004,33(6):991—995.
[9]邹军,彭观良,陈俊华,等.γLiAlO2晶体的退火研究[J].人工晶体学报,2004,33(6):924—928.ZOUJun,PENGGuanliang,CHENJunhua,etal.JSynth Cryst(inChinese),2004,33(6):924—928.
[10]徐科,邓佩珍,徐军,等.两种新型衬底材料LiAlO2和LiGaO2晶体的腐蚀形貌和缺陷研究[J].硅酸盐学报,1998,26(3):281—285.XUKe,DENGPeizhen,XUJun,etal.JChinCeramSoc(in Chinese),1998,26(3):281—285.how to catch a cheater link go
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