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W-SiO_2浆料与AlN共烧界面的微观结构分析
作者:胡永达 蒋明 杨邦朝 崔嵩 张经国 
单位:电子科技大学信息材料工程学院 电子科技大学信息材料工程学院 电子科技大学信息材料工程学院 信息产业部电子四十三所 信息产业部电子四十三所 成都610054  成都610054  成都610054  合肥230022  合肥230022 
关键词:氮化铝  多层共烧  导带浆料  烧结应力 
分类号:TQ174.1
出版年,卷(期):页码:2002,30(3):311-315
DOI:
摘要:
氮化铝共烧基板广泛用于高密度的多芯片组件的封装中 ,共烧导带浆料的研制则是其中的关键技术 .本研究提出了以W为导电材料 ,SiO2 为添加剂配制的导体浆料 ,获得了SiO2 的质量分数在 0 .45 %时 ,烧结应力减弱到充分小 ,使得AlN共烧基板达到足够的致密度和平整度 .导带方阻达到 10mΩ/□ ,基板的翘曲度在 5 0mm中小于 5 0 μm ,导带焊盘的键合强度大于 2 9.4MPa .
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Aluminum nitride (AlN) co_fire ceramic substrate has been widely used in high_density multichip module. The key process is the production of co_fire conductive paste. A tungsten paste was used with SiO 2 glass as additive for co_fire multi_layer ceramic substrates. It was found that when 0.45% (in mass) SiO 2 was added in the paste, the sintering stress was decreased to such a degree that it could not influence the substrate shrinkage. As a result, the AlN substrate at interface is very dense and the AlN grains at interface are not different from those in the bulk. The sheet resistivity reaches 10 mΩ/□, the curving degree of the substrate is smaller than 50 μm/50 mm and the adhesion strength is greater than 29.4 MPa.
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基金项目:
信息产业部电子科学研究院预研课题 (3 0 .2 .2 .5 -1) .
作者简介:
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参考文献:
[1] LIANGTX ,SUNWZ ,WANGXH ,etal.Effectsofoxidead ditivesonsheetresistanceofWthick_filmconductor[J].JMaterSci,1996,31:5159—5161. [2] AKIRAY ,NOBUOO .FormingametallizedlayeronanAlNsubstratebyapplyingandheatingapasteofametalcomposedofWandMo[P].US 5370907,1994. [3] ASAIH ,TAKAHASHIT .Influenceofthegrainboundaryphaseonthemechanicalstrengthataluminumnitridesubstratesurfaces[J].IEEETransCompPackagManufTechnol,BAdvPackag ing,2000,23(3):452—460. [4] 梁彤翔,朱钧国,杨 ,等(LIANGTX ,etal).AlN/W多层体共烧过程中的应力[J],硅酸盐学报(JChinCeramSoc),1998,26(3):286—291.
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