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近化学计量比高掺铁铌酸锂晶体的红光全息存储性能
作者:范叶霞 夏士兴 徐超 徐玉恒 关承祥 曹良才  
单位:哈尔滨理工大学材料科学与工程学院 哈尔滨工业大学化工学院 哈尔滨师范大学物理系 清华大学 精密测试技术及仪器国家重点实验室  
关键词:掺铁铌酸锂晶体  全息存储性能  抗光损伤能力  提拉法生长 
分类号:O734
出版年,卷(期):页码:2010,38(5):820-824
DOI:
摘要:

采用提拉法生长了掺质量分数分别为0.01%,0.05%和0.10%Fe2O3的近化学计量比掺铁铌酸锂晶体(near stochiometric Fe:LiNbO3,Fe:NSLN)。采用633nm波长的激光作为光源,利用二波耦合实验和光斑畸变法研究了晶体的红光全息性能。结果显示:当铁含量小于0.05%时,随着铁含量的增加,晶体的写入时间和擦除时间变短,灵敏度增加,动态范围增大,最大衍射效率增强,抗光损伤能力降低。但当铁含量为0.10%时,最大衍射效率减小,抗光损伤能力急剧降低。结合晶体的结构缺陷模型对此现象进行了解释。

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A series of near stoichiometric Fe:LiNbO3 (Fe:NSLN) crystals doped with 0.01% (in mass, the same below), 0.05% and 0.10%Fe2O3 were grown by Czochralski method. The red holographic properties of Fe:NSLN crystals were measured by the two-beam coupling experiment and transmitted beam pattern distortion method using 633 nm laser as light source. The results show that when the Fe-doped amount is less than 0.05%, as Fe-doped amount increases, both response time and erasure time of Fe:NSLN crystals are short, their sensitivity increases, the dynamic range and maximum diffraction efficiency enhance, and the photo-damage resistance ability reduces. However, when the Fe-doped amount reaches 0.10%, the maximum diffraction efficiency and photo-damage resistance ability of Fe:NSLN crystal decrease. Some related experimental results are explained based on Li-vacancy defect model.

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基金项目:
国家自然科学基金(60777006);; 清华大学精密测试技术及仪器国家重点实验室开放基金资助项目
作者简介:
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