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Sr掺杂对La_(1-x)Sr_xCuO_4/Nb:SrTiO_3超导能隙的影响
作者:陈雷明 李广成 陈鹏 郭艳峰  
单位:郑州航空工业管理学院 中国科学院物理研究所 郑州轻工业学院  
关键词:高温超导体  异质结构  整流曲线  扩散势 
分类号:TM26
出版年,卷(期):页码:2010,38(6):1075-1079
DOI:
摘要:

采用在Nb掺杂钛酸锶(strontlum tltanate,SrTiO3,STO)衬底上沉积La1-xSrxCuO4(x为摩尔分数)薄膜的方法,制备不同Sr掺量的系列La1-xSrxCuO4/Nb-SrTiO3(LSCO/NSTO)异质结构材料。对LSCO/NSTO整流曲线的研究发现:当低于超导转变温度,在La1-xSrxCuO4处于过掺杂与欠掺杂两种状态时,扩散势的变化(ΔVd)极大不同。由于ΔVd系超导能隙(Eg)的打开所致,ΔVd的变化也反映超导能隙与空穴掺杂浓度的依赖关系,对欠掺杂和过掺杂两种不同掺杂范围的相关行为的研究结果与其他理论的观点具有很好的一致性。

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La1–xSrxCuO4 (LSCO)/Nb-doped SrTiO3 (NSTO) junctions were created by growing systematically doped LSCO films on NSTO single-crystal substrates. In rectifying curves,variation of diffusion potential (ΔVd) below transition temperature of the LSCO was found to be very different in under-and over-doped regimes upon hole doping. Because ΔVd was caused by opening of super-conducting gap (Eg),development of ΔVd reveals the development of Eg with hole doping. The cases in these two doped regimes are discussed in details. The results agree well to generally perceived points obtained by the other methods. The study in presented work provided a convenient and alternative route for exploring the developments of Eg in the high-temperature superconductors with hole doping.

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基金项目:
河南省科技攻关计划(092102210166);; 河南省教育厅自然科学基础研究计划(2008A140013)资助项目
作者简介:
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参考文献:

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