硅酸盐学报

倒筒式直流溅射法生长大尺寸双面YBCO高温超导薄膜

作者：陶伯万刘兴钊张鹰罗安何世明李言荣

单位：电子科技大学电子科技大学电子科技大学电子科技大学电子科技大学电子科技大学成都610054 成都610054 成都610054 成都610054 成都610054 成都610054

关键词：高温超导薄膜钇钡铜氧超导膜直流溅射

分类号：O484.1

出版年,卷(期):页码：2002,30(2):220-223

DOI：

摘要：

采用倒筒式直流溅射结合辐射加热方法对无源微波器件用的Y1 Ba2 Cu3O7-x(YBCO)双面薄膜生长进行了研究 ,实验结果表明 :直流非磁控溅射可以制备性能良好的薄膜 .通过基片绕支撑杆和基片表面法线旋转 ,实现了在 (10 0 )LaAlO3基片两面同时原位沉积厚度均匀的YBCO薄膜 .生长出的 2 5 .4mm(linch)高质量的YBCO双面薄膜 ,两面的Tc0 分别为 90 .3K和 90 .4K ,超导转变宽度均为 0 .8K ,两面的微观表面电阻 (Rs)随温度变化一致 ,Rs(77K ,10GHz)分别为 3 3 0 μΩ和 40 0 μΩ .在直径 3 0mm的基片上 ,薄膜的厚度均匀性良好 ,其厚度起伏在 10 %以内 .薄膜面内的Tc0 分布在 90K附近 ,Rs 都分布在 1mΩ以内 ,能满足微波器件研制的需要

The preparation of 25.4 mm (1 inch) in diameter double_sided YBCO thin films for microwave passive devices by inverted cylindrical DC sputtering with radiant heating is reported. By rotating the substrate around the axis of the substrate holder and the normal of the substrate, YBCO thin films on the both sides of (100)LaAlO 3 substrate were simultaneously deposited. The T c?0 values on the both sides were 90.3 K, 90.4 K respectively and the transition width of the YBCO thin films was 0.8 K. The R s(77 K, 10 GHz) on the both sides of the sample were 330 μΩ and 400 μΩ. The distribution of T c?0 and R s in the whole wafer is homogeneous. The thickness fluctuation of the film is limited to 10%, which well meets the microwave application.

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参考文献：

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