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BiVO_4掺杂对(Bi_(1.5)Zn_(0.5))(Zn_(0.5)Nb_(1.5))O_7陶瓷介电性能的影响
作者:周焕福 黄金亮 王茹玉 殷镖 孙道明  
单位:河南科技大学材料科学与工程学院 河南科技大学材料科学与工程学院 河南科技大学材料科学与工程学院 河南科技大学材料科学与工程学院 河南科技大学材料科学与工程学院 河南洛阳471003 河南洛阳471003 河南洛阳471003 河南洛阳471003 河南洛阳471003 
关键词:锌铌酸铋陶瓷  钒酸铋掺杂  显微结构  介电性能 
分类号:TQ174
出版年,卷(期):页码:2005,33(12):1453-1456
DOI:
摘要:
采用传统陶瓷工艺制备了Bi VO_4掺杂的(Bi_(1.5)Zn_(0.5))(Zn_(0.5)Nb_(1.5))O_7(bismuth zincate niobate,BZN)介质陶瓷,用X射线衍射、扫描电镜以及电感电容电阻测试仪等对其烧结特性、相结构及介电性能进行了系统研究。结果表明:Bi VO_4掺杂能显著降低BZN的烧结温度,由1000℃降至850℃,同时可优化频率温度系数τf,由-450×10-6/℃变为-254×10-6/℃。Bi VO_4的掺杂量为5%,烧结温度为900℃时,BZN陶瓷具有较好的介电性能:介电常数ε=153,品质因数Q=2100,频率温度系数τf=-350×10-6/℃。
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Dielectric ceramics (Bi_ 1.5 Zn_ 0.5 )(Zn_ 0.5 Nb_ 1.5 )O_ 7 (bismuth zincate niobate , BZN) doped with BiVO_ 4 were prepared by the conventional ceramic processing technology. The sintering behavior, crystal structure and dielectric properties of BiVO_ 4 -doped BZN ceramics were investigated systematically by X-ray diffraction, scanning electron microscopy and inductance-capacitance resistance analysis. The experimental results indicate that BiVO_ 4 doping can decrease the sintering temperature remarkably (from 1 000 ℃ to 850 ℃) and optimize the temperature coefficient of the resonance frequency (changing from -450×10~ -6 /℃ to -254×10~ -6 /℃). The BZN ceramic with 5% BiVO_ 4 doping sintered at 900 ℃ has the optimum dielectric properties, i.e. a dielectric constant ε of 153, a quality factor Q of 2 100 and a temperature coefficient of resonance frequency τ_ f of -350× 10~ -6 /℃.
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基金项目:
教育部留学归国人员科研基金(200314)资助项目。~~
作者简介:
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参考文献:
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