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PZT薄膜晶化过程的相变及铁电畴监测
作者:黄文 张鹰 蒋书文 曾慧中 魏贤华 李言荣 
单位:电子科技大学微电子与固体电子学院 电子科技大学微电子与固体电子学院 电子科技大学微电子与固体电子学院 电子科技大学微电子与固体电子学院 电子科技大学微电子与固体电子学院 电子科技大学微电子与固体电子学院 成都 610054  成都 610054  成都 610054  成都 610054  成都 610054  成都 610054 
关键词:锆钛酸铅  薄膜  快速热处理  结晶  相变  铁电畴 
分类号:TM22
出版年,卷(期):页码:2004,32(12):1500-1504
DOI:
摘要:
采用射频磁控溅射法,在室温Pt/Ti/SiO_2/Si上制备了非晶态Pb(Zr_(0.48)Ti_(0.52))O_3(PZT)薄膜,经不同温度,相同保温时间快速退火处理使其转化为多晶PZT薄膜。用XRD,AFM测定了PZT薄膜的相组分与表面结构,并利用压电响应力显微镜(piezoresponse force microsco-py,PFM)观察了初始晶化和高度晶化样品自发极化形成的铁电畴。结果表明:PZT薄膜晶化发生在550℃,PFM可观察到自发形成的圆形铁电畴。650℃处理的样品晶化最充分并呈现出(111)择优取向,用PFM观察到该样品形成具有强烈压电信号的电畴。由此分别算得铁电相占薄膜总体积的(7.8±0.2)%和(97.3±0.2)%。PFM结合XRD,AFM的运用为寻求铁电薄膜晶化机理提供了新的途径。
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Pb(Zr_(0.48) Ti_(0.52))O_3 (PZT) thin films were prepared on the Pt/Ti/SiO_2/Si substrates by RF- magnetron sputtering method at room temperature. After rapid thermal annealing (RTA) at different temperatures with the same annealing time, the amorphous films were transformed into polycrystalline PZT films. The phase formation and surface micro-structure were investigated by X-ray diffraction (XRD) and atom force microscopy (AFM). Furthermore, the ferroelectric domains formed by the spontaneous polarization of the initially and highly crystallized samples are observed by piezoresponse force microscopy (PFM). The results show that the crystallization of the perovskite phase begins at about 550℃ and some self-organized round ferroelectrie domains are observed by PFM. The sample annealed at 650℃ is well crystallized and demonstrated (111) preferred orientation. Ferroelectric domains with strong piezoelectric response in the sample are observed by PFM. As a consequence, the volume fraction of perovskite phase conversion calculated is (7.8±0.2)% and (97.3±0.2)% respectively. The result shows that by using PFM associated with XRD and AFM a new way is found to investigate the crystallization mechanism of the ferroeleetric thin films.
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基金项目:
国家重点基础研究规划基金(51310Z03)
作者简介:
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参考文献:
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