硅酸盐学报

氧气含量对射频磁控溅射Ba_(0.5)Sr_(0.5)TiO_3薄膜介电性能的影响

作者：林明通陈国荣杨云霞肖田陈晨曦

单位：华东理工大学材料科学与工程学院华东理工大学材料科学与工程学院华东理工大学材料科学与工程学院上海广电电子股份有限公司上海广电电子股份有限公司上海200237 上海200237 上海200237 上海200081 上海200081

分类号：TM223

出版年,卷(期):页码：2006,34(5):593-595

DOI：

摘要：

采用射频磁控溅射法在镀氧化铟锡的Corning1737玻璃基片上制备了用于无机电致发光显示器绝缘层的Ba0.5Sr0.5TiO3介电薄膜,该薄膜厚约400nm。研究了O2和Ar+O2的体积比V(O2)/V(Ar+O2)对薄膜沉积速率、结晶性和介电性能的影响。当V(O2)/V(Ar+O2)由0增加至0.5时,薄膜的结晶取向、介电常数、介电损耗、击穿场强和漏电流密度并没有明显的规律性可循。V(O2)/V(Ar+O2)为0.1时,薄膜的品质因子最好,其值为5μC/cm2。

400 nm thick Ba0.5Sr0.5TiO3 thin films used as insulating layer in thin film electroluminescent devices were prepared on indium tin oxide-coated Corning 1737 glass by radio frequency magnetron sputtering, and the effect of volume ratio of O2 to Ar+O2 V(O2)/V(Ar+O2) on deposition rate, crystallinity as well as dielectric properties of the Ba0.5Sr0.5TiO3 thin films were investigated. The preferred orientation, dielectric constant, dielectric dissipation, breakdown strength and leakage current density do not follow a clearly regular trend when the V(O2)/V(Ar+O2) is varied from 0 to 0.5. The optimal figure of merit is 5 μC/cm2 at a V(O2)/V(Ar+O2) of 0.1.

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参考文献：

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