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二氧化硅掺杂对黑色氧化铝陶瓷的改性(英文)
作者:周东祥 梁军 龚树萍 郑志平  
单位:华中科技大学电子科学与技术系 华中科技大学电子科学与技术系 华中科技大学电子科学与技术系 华中科技大学电子科学与技术系 武汉430074 武汉430074 武汉430074 武汉430074 
关键词:封装材料  氧化铝陶瓷  氧化硅掺杂  介电性能 
分类号:TQ174.1
出版年,卷(期):页码:2007,35(9):1178-1180
DOI:
摘要:

用超微细氧化铝(Al2O3),二氧化硅(SiO2)粉体及适量的过渡金属氧化物,用固相反应法在1350℃空气中烧结得到了致密的黑色Al2O3陶瓷。研究了SiO2掺杂对陶瓷显微结构和电性能的影响。实验表明:在黑色Al2O3陶瓷中,SiO2是一种较好的掺杂剂,它不仅可以降低烧结温度,使陶瓷晶粒细小均匀,同时还可以改善材料的电气性能,使之满足用作晶体振荡器件、光电器件及集成电路器件等的基板及避光封装外壳的要求。

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Using ultra-fine alumina (Al2O3), silica (SiO2) and appropriate transition elements as starting materials, black Al2O3 ce- ramics were obtained by conventional solid state reaction method at 1 350 ℃ in ambient air. The effect of SiO2 additive on the micro- structure and electrical properties of black Al2O3 ceramics was studied. The results indicated that SiO2 was the right kind of dopant for black Al2O3 ceramics. The SiO2 not only lowered the sintering temperature of black Al2O3 ceramics, led fine grains and uniform mi- crostructure, but also improved electrical properties. The obtained black Al2O3 ceramics was suitable for substrate and packaging materials in crystal oscillator, photoelectric device and integrated circuits.

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参考文献:

[1] ZHU Jing. Application of the new material in high-density electronic packaging and its prospect [J]. Printed Circuit Inf (in Chinese), 2005(1): 10–13. [2] YIN Yanshen, ZHANG Jingde. Alumina Ceramics and Its Composite (in Chinese). Beijing: Chemical Industry Press, 2001. 23–25. [3] ANTENEH K, JOHN P, ALTAF H. Anisotropic grain growth in α-Al2O3 with SiO2 and TiO2 additions [J]. J Am Ceram Soc, 2000, 83(11): 2 845–2 851. [4] GAVRILOV K L, BENISON S J, MIKESKA K R. Role of magnesia and silica in alumina microstructure evolution [J]. J Mater Sci, 2003, 38: 3 965–3 972. [5] CHAN W P , DUK Y Y. Effect of SiO2, CaO and MgO additions on the grain growth of alumina [J]. J Am Ceram Soc, 2000, 83(10): 2 605– 2 609.

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