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BaTiO_3铁电薄膜在硅基片上的取向生长
作者:魏贤华 黄文 接文静 朱俊  
单位:西南科技大学材料科学与工程学院 电子科技大学电子薄膜与集成器件国家重点实验室 电子科技大学电子薄膜与集成器件国家重点实验室 电子科技大学电子薄膜与集成器件国家重点实验室 四川绵阳621010 电子科技大学 电子薄膜与集成器件国家重点实验室 成都610054 成都610054 成都610054 成都610054 
关键词:钛酸钡  铁电薄膜  缓冲层  取向生长  激光沉积 
分类号:TM221
出版年,卷(期):页码:2007,35(5):583-587
DOI:
摘要:

采用脉冲激光沉积方法,在硅基片上先沉积 MgO 或 CeO2缓冲层后再制备 BaTiO3 (BTO)铁电薄膜。通过原位反射高能电子衍射来监测 MgO,CeO2 缓冲层在硅基片上的生长行为。用 X 射线衍射测定 BTO 薄膜的结晶取向。并利用压电响应力显微镜观察了铁电薄膜的自发极化形成的铁电畴。结果表明:BTO 薄膜在不同的缓冲层硅基片上以不同的取向生长,在织构的 MgO/Si(001)基片上为(001)择优,择优程度与 MgO 织构品质有关,其中在双轴织构 MgO 缓冲层上为(001)单一取向;在 CeO2(111)缓冲层上为(011)单一取向。(001)取向的 BTO 薄膜具有更大的面外极化,而(011)取向的 BTO薄膜具有更大的面内极化。

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Buffer layers of MgO(or CeO2)were first deposited on silicon substrates,and then BaTiO3(BTO)ferroelectric films were formed again by pulsed laser deposition.The growth of MgO,CeO2 buffer layers was monitored in-situ by the reflection high-energy electron diffraction,and the crystalline orientation of BTO films was investigated by X-ray diffraction.Furthermore,ferroelectric domains formed in BTO films by spontaneous polarization were observed by piezoresponse force microscopy.The results show that BTO films are grown with different crystal orientation on different buffer layers of silicon substrates.The BTO films grew preferen-tially along the(001)orientation on textured MgO/Si(001);the preferred degree is correlated to the texture characteristics.BTO films with texture characteristics on the(001)and(011)orientations were obtained on biaxial textured MgO and CeO2(111)buffer layers,respectively.BTO films with an(001)orientation exhibit a higher out-of-plane polarization,while the films grown along an(011)orientation show higher in-plane polarization.

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基金项目:
国家重点基础研究规划基金(51310Z03)资助项目
作者简介:
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参考文献:

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