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Ca–B–Si掺杂对Ba(Zn1/3Ta2/3)O3陶瓷介电性能的影响
作者:陈黎 吴孟强 肖勇 姜锐 黄明冀 刘轶 张树人 
单位:电子科技大学 电子薄膜与集成器件国家重点实验室 成都 610054 
关键词:钙硼硅掺杂 微波介质陶瓷 微晶玻璃 钽锌酸钡陶瓷 介电特性 
分类号:TM277
出版年,卷(期):页码:2011,39(11):75-79
DOI:
摘要:

采用固相烧结法制备了添加烧结助剂Ca–B–Si (CBS)微晶玻璃的Ba(Zn1/3Ta2/3)O3(BZT)陶瓷。研究了CBS添加量对BZT陶瓷烧结温度和微波介电性能的影响。结果表明,CBS起到助溶剂的作用,添加CBS降低了BZT陶瓷的烧结温度,并改善了微波介电性能。添加2%(质量分数)的CBS时,BZT的烧结温度从纯相烧结时的1 600 ℃降低到1 150 ℃,并具有良好的微波介电特性:相对介电常数εr = 32.06,品质因数与频率之积Q × f = 149 × 103 GHz,谐振频率温度系数τf = –0.14 × 10–6/℃。

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Ba(Zn1/3Ta2/3)O3 (BZT) microwave dielectric ceramics with Ca–B–Si (CBS) microcrystal glass were prepared by a solid state reaction method. The effect of doping amounts of CBS on the sintering temperature and the dielectric properties of the BZT ceramics were investigated. The results indicate that the addition of CBS as a solvent can reduce the sintering temperature of the BZT ceramics and improve the microwave dielectric properties. The sintering temperature of the BZT ceramics doped with the CBS of 2% in mass could be decreased from 1 600 ℃ to 1 150 ℃. The superior dielectric properties at 1 150 ℃ were the relative dielectric constant εr of 32.06, the product of quality factor and frequency (Q × ?) of 149 × 103 GHz and the resonance frequency temperature coefficient τf of –0.14 × 10–6/℃.

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基金项目:
四川省青年基金(JS0303001)资助项目
作者简介:
陈 黎(1986—),女,硕士研究生
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参考文献:

[1] TZOU Wencheng, CHAN Chaochin, CHENG Pingshou, et al. Effect of BaTi4O9 on the sintering and microwave dielectric characteristics of Ba(Zn1/3Ta2/3)O3 ceramics [J]. Mater Sci, 2005, 40(17): 4711–4714. [2] KIM Min-han, SAHN Nahm, LEE Woosung, et al. Structural variation and microwave dielectric properties of TiO2-doped Ba(Zn1/3Ta2/3)O3 ceramics [J]. J Eur Ceram Soc, 2004, 24(13): 3547–3552. [3] 吴顺华, 王爽, 王国庆, 等. 添加剂Mn和烧结温度对Ba(Zn1/3? Ta2/3)O3体系介电性能的影响[J]. 天津大学学报, 2005, 38(1): 80–84. WU Shunhua, WANG Shuang, WANG Guoqing, et al. J Tianjin Univ (in Chinese), 2005, 38(1): 80–84. [4] DESU S B, O'BRYAN H M. Microwave loss quality of BZT ceramics [J]. J Am Ceram Soc, 1985, 68(10): 546–551. [5] VERES A, MARINEL S, ROULLAND F, et al. Dielectric properties of BMN and effect of B2O3 and LiF addition [J]. J Eur Ceram Soc, 2005, 25(4): 2759–2762. [6] PARK H S, HUR K H, KIM W S, et al. Non-reducible, low temperature dielectric ceramic composition, capacitor and method of preparing [P]. US Patent, 6777363. 2004–08–17. [7] REANEY I M, WISE P L, QAZI I, et al. Ordering and quality factor in 0.95 Ba(Zn1/3Ta2/3)O3–0.05 SrGa1/2Ta1/2O3 production resonators [J]. J Eur Ceram Soc, 2003, 23(16): 3021–3034. [8] IOACHIM A, TOCASAIN M I, BANCIU M G, et al. Annealing effects on properties of Ba(Zn1/3Ta2/3)O3 dielectric materials [C]//International Semiconductor Conference, Bucharest-Maqurele, Romania, 2006: 253– 256. [9] WERSING W. High frequency ceramic dielectric and their application for components [J]. Electron Ceram, 1991, 47(17): 67–119.

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