硅酸盐学报

多铁性磁电材料应用于存储技术的研究现状

作者：施科何泓材王宁

单位：电子科技大学微电子与固体电子学院电子薄膜与集成器件国家重点实验室成都 610054

关键词：多铁性磁电材料存储器读头铁电性铁磁性

分类号：TB34；TP333

出版年,卷(期):页码：2011,39(11):80-87

DOI：

摘要：

多铁性磁电材料同时具有铁电性、铁磁性和磁电效应等多种性能，它为新功能存储器件的设计提供了可能性。主要综述了多铁性磁电单相和复合材料在存储技术领域的应用研究，包括基于多铁性磁电材料设计的“电写磁读”多铁性磁电存储器、多态存储器以及基于多铁性磁电材料设计双稳态储存器件的新原理和新思路；介绍了多铁性磁电材料在存储读头技术方面的应用；并将基于多铁性磁电材料的存储器与其他几种存储器作了简单比较；最后就多铁性磁电材料的存储技术发展面临的挑战进行了总结和归纳。

Since multiferroic magnetoelectric (ME) material has ferroelectric, ferromagnetic and magnetoelectric properties, it is possible to use this material for the design of storage device. Recent development on the application of single-phase or composite ME material on storage technology was reviewed. The areas were magnetoelectric random access memories (MERAM) with electric writing and magnetic read, magnetoelectric multiple-state storages, other new storages with novel working principles and ME read heads. In addition, the storage devices based on ME materials were compared with other different storage devices, and the challenges with the storage technology were summarized.

基金项目：

国家自然科学基金(51002020)；中央高校基本科研业务费专项资金(ZYGX2009J033)资助项目

作者简介：

施科(1987—)，男，硕士研究生

参考文献：

[1] NAN C W, BICHURIN M I, DONG S, et al. Multiferroic magnetoelectric composites: historical perspective, status, and future directions [J]. J Appl Phys, 2008, 103: 031101(1–35).
[2] FIEBIG M. Revival of the magnetoelectric effect [J]. J Phys D Appl Phys, 2005, 38: R123–R152.
[3] 林元华, 姜庆辉, 何泓材, 等. 多铁性氧化物基磁电材料的制备及性能[J]. 硅酸盐学报, 2007, 35(1): 10–21.
LIN Yuanhua, JIANG Qinghui, HE Hongcai, et al. J Chin Ceram Soc (in Chinese), 2007, 35(1): 10–21.
[4] SPALDIN N A, FIEBIG M. The renaissance of magnetoelectric multiferroics [J]. Science, 2005, 309: 391–392.
[5] CHU Y-H, MARTIN L W, HOLCOMB M B, et al. Electric-field control of local ferromagnetism using a magnetoelectric multiferroic [J]. Nat Mater, 2008, 7: 478–482.
[6] HAMBE M, PETRARU A, PERTSEV N A, et al. Crossing an interface: Ferroelectric control of tunnel currents in magnetic complex oxide heterostructures [J]. Adv Funct Mater, 2010, 20: 2436–2441.
[7] NAN C-W. Magnetoelectric effect in composites of piezoelectric and piezomagnetic phases [J]. Phys Rev B, 1994, 50: 6082–6088.
[8] HUR N, PARK S, SHARMA P A, et al. Colossal magnetodielectric effects in DyMn2O5 [J]. Phys Rev Lett, 2004, 93: 107207(1–4).
[9] ZHAI J, DONG S, XING Z, et al. Geomagnetic sensor based on giant magnetoelectric effect [J]. Appl Phys Lett, 2007, 91: 123513(1–3).
[10] SCOTT J F. Multiferroic memories [J]. Nat Mater, 2007, 6: 256–257.
[11] BIBES M, BARTH L MY A. Multiferroics: Towards a magnetoelectric memory [J]. Nat Mater, 2008, 7: 425–426.
[12] USTINOV A B, SRINIVASAN G, KALINIKOS B A. Ferrite-ferroelec- tric hybrid wave phase shifters [J]. Appl Phys Lett, 2007, 90: 031913(1–3).
[13] TATARENKO A S, GHEEVARUGHESE V, SRINIVASAN G. Magnetoelectric microwave band pass filter [J]. Electron Lett, 2006, 42: 540– 541.
[14] SCIENCE'S Editors. Breakthrough of the year: Areas to watch [J]. Science, 2007, 318: 1848–1849.
[15] EERENSTEIN W, MATHUR N D, SCOTT J F. Multiferroic and magnetoelectric materials [J]. Nature, 2006, 442: 759–765.
[16] MA J, HU J, LI Z, et al. Recent progress in multiferroic magnetoelectric composites: from bulk to thin films [J]. Adv Mater, 2011, 23: 1062–1087.
[17] SPALDIN N A, CHEONG S-W, RAMESH R. Multiferroics: Past, present, and future [J]. Phys Today, 2010, 63: 38–43.
[18] PRINZ G A. Magnetoelectronics [J]. Science, 1998, 282: 1660–1663.
[19] 石雷, 白飞明. 双钙钛矿型室温多铁性材料的研究进展[J]. 硅酸盐学报, 2011, 39(3): 550–557.
SHI Lei, BAI Feiming. J Chin Cecam Soc (in Chinese), 2011, 39(3): 550–557.
[20] 段纯刚. 磁电效应研究进展[J]. 物理学进展, 2009, 29: 215–238.
DUAN Chungang. Prog Phys (in Chinese), 2009, 29: 215–238.
[21] 王克锋, 刘俊明, 王雨. 单相多铁性材料—极化和磁性序参量的耦合与调控[J]. 科学通报, 2008, 53: 1098–1135.
WANG Kefeng, LIU Junming, WANG Yu. Chin Sci Bull (in Chinese), 2008, 53: 1098–1135.
[22] GAJEK M, BIBES M, FUSIL S, et al. Tunnel junctions with multiferroic barriers [J]. Nat Mater, 2007, 6: 296–302.
[23] BAEK S H, JANG H W, FOLKMAN C M, et al. Ferroelastic switching for nanoscale non-volatile magnetoelectric devices [J]. Nat Mater, 2010, 9: 309–314.
[24] SCHMID H. Multi-ferroic magnetoelectrics [J]. Ferroelectrics, 1994, 162: 317–338.
[25] 何泓材, 林元华, 南策文. 多铁性磁电复合薄膜[J]. 科学通报, 2008, 53: 1136–1148.
HE Hongcai, LIN Yuanhua, NAN Cewen. Chin Sci Bull (in Chinese), 2008, 53: 1136–1148.
[26] MARTIN L W, CRANE S P, CHU Y-H, et al. Multiferroics and magnetoelectrics: thin films and nanostructures [J]. J Phys Condens Matter, 2008, 20: 434220(1–13).
[27] YAN L, BAI F, LI J, et al. Nano-structures in perovskite-ferrite two phase composite epitaxial thin films [J]. Philos Mag, 2010, 90: 103– 111.
[28] LEBEUGLE D, COLSON D, FORGET A, et al. Room-temperature coexistence of large electric polarization and magnetic order in BiFeO3 single crystals [J]. Phys Rev B, 2007, 76: 024116(1–8).
[29] WU L, SONG Z, RAO F, et al. Multistate storage through successive phase change and resistive change [J]. Appl Phys Lett, 2009, 94: 243115(1–3).
[30] HUR N, PARK S, SHARMA P A, et al. Electric polarization reversal and memory in a multiferroic material induced by magnetic fields [J]. Nature, 2004, 429: 392–395.
[31] 施展, 王翠萍, 刘兴军, 等. 基于磁电复合材料的四态存储器[J]. 科学通报, 2008, 53(10): 1177–1179.
SHI Zhan, WANG Cuiping, LIU Xingjun, et al. Chin Sci Bull (in Chinese), 2008, 53(10): 1177–1179.
[32] SHI Z, WANG C, LIU X, et al. A four-state memory cell based on magnetoelectric composite [J]. Chin Sci Bull, 2008, 53(14): 2135– 2138.
[33] YANG F, ZHOU Y C, TANG M H, et al. Eight-logic memory cell based on multiferroic junctions [J]. J Phys D Appl Phys, 2009, 42: 072004(1–6).
[34] YANG F, TANG M H, YE Z, et al. Eight logic states of tunneling magnetoelectroresistance in multiferroic tunnel junctions [J]. J Appl Phys, 2007, 102: 044504(1–5).
[35] ZHANG L B, TANG M H, YANG F. Sixteen resistive states of a tunnel junction with a composite barrier [J]. Eur Phys J Appl Phys, 2010, 51: 10604(1–5).
[36] LI Z, WANG J, LIN Y, et al. A magnetoelectric memory cell with coercivity state as writing data bit [J]. Appl Phys Lett, 2010, 96: 162505(1–3).
[37] WANG J, HU J, WANG H, et al. Electric-field modulation of magnetic properties of Fe films directly grown on BiScO3–PbTiO3 ceramics [J]. J Appl Phys, 2010, 107: 083901(1–5).
[38] ZOU T, WANG X, WANG H, et al. Bulk dense fine-grain (1–x)BiScO3– xPbTiO3 ceramics with high piezoelectric coefficient [J]. Appl Phys Lett, 2008, 93: 192913(1–3).
[39] OVERBY M, CHERNYSHOV A, ROKHINSON L P, et al. GaMnAs- based hybrid multiferroic memory device [J]. Appl Phys Lett, 2008, 92: 192501(1–3).
[40] WELP U, VLASKO-VLASOV V K, LIU X, et al. Magnetic domain structure and magnetic anisotropy in Ga1–xMnxAs [J]. Phys Rev Lett, 2003, 90: 167206(1–4).
[41] LIU X, SASAKI Y, FURDYNA J K. Ferromagnetic resonance in Ga1–xMnxAs: Effects of magnetic anisotropy [J]. Phys Rev B, 2003, 67: 205204(1–9).
[42] MOSER A, TAKANO K, MARGULIES D T, et al. Magnetic recording: advancing into the future [J]. J Phys D Appl Phys, 2002, 35: R157– R167.
[43] CHAPPERT C, FERT A, VAN DAU F N. The emergence of spin electronics in data storage[J]. Nat Mater, 2007, 6: 813–823.
[44] VOPSAROIU M, BLACKBURN J, MUNIZ-PINIELLA A, et al. Multiferroic magnetic recording read head technology for 1 Tbit/in2 and beyond [J]. J Appl Phys, 2008, 103: 07F506(1–3).
[45] VOPSAROIU M, BLACKBURN J, CAIN M G. A new magnetic recording read head technology based on the magneto-electric effect [J]. J Phys D Appl Phys, 2007, 40: 5027–5033.
[46] ZHANG Y, LI Z, DENG C, et al. Demonstration of magnetoelectic read head of multiferroic heterostructures [J]. Appl Phys Lett, 2008, 92: 152510(1–3).
[47] DENG C, ZHANG Y, MA J, et al. Magnetoelectric effect in multiferroic heteroepitaxial BaTiO3–NiFe2O4 composite thin films [J]. Acta Mater, 2007, 56: 405–412.
[48] ZHANG Y, DENG C, MA J, et al. Enhancement in magnetoelectric response in CoFe2O4–BaTiO3 heterostructure [J]. Appl Phys Lett, 2008, 92: 062911(1–3).
[49] BICHURIN M I, PETROV V M, SRINIVASAN G. Theory of low- frequency magnetoelectric effects in ferromagnetic-ferroelectric layered composites [J]. J Appl Phys, 2002, 92: 7681–7683.
[50] BICHURIN M I, PETROV V M, RYABKOV O V, et al. Theory of magnetoelectric effects at magnetoacoustic resonance in single-crystal ferromagnetic-ferroelectric heterostructures [J]. Phys Rev B, 2005, 72: 060408(1–4).
[51] BANDIC Z Z, VICTORAI R H. Advances in magnetic data storage technologies [J]. Proc IEEE, 2008, 96: 1751–1753.
[52] KATTI R R, ZHU T. Attractive magnetic memories [J]. IEEE Circuits Device, 2001: 26–34.
[53] KRIEGER J H. Physical concepts of memory device operation based on piezoacoustic and pyroelectric properties of ferroelectric films [J]. J Appl Phys, 2009, 105: 061629(1–6).
[54] SETTER N, DAMJANOVIC D, ENG L, et al. Ferroelectric thin films: Review of materials, properties, and applications [J]. J Appl Phys, 2006, 100: 051606(1–46).
[55] BURR G W, BREITWISCH M J, FRANCESCHINI M, et al. Phase change memory technology [J]. J Vac Sci Technol B, 2010, 28: 223– 262.

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