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多铁性磁电材料应用于存储技术的研究现状
作者:施科 何泓材 王宁 
单位:电子科技大学微电子与固体电子学院 电子薄膜与集成器件国家重点实验室 成都 610054 
关键词:多铁性磁电材料 存储器 读头 铁电性 铁磁性 
分类号:TB34;TP333
出版年,卷(期):页码:2011,39(11):80-87
DOI:
摘要:

多铁性磁电材料同时具有铁电性、铁磁性和磁电效应等多种性能,它为新功能存储器件的设计提供了可能性。主要综述了多铁性磁电单相和复合材料在存储技术领域的应用研究,包括基于多铁性磁电材料设计的“电写磁读”多铁性磁电存储器、多态存储器以及基于多铁性磁电材料设计双稳态储存器件的新原理和新思路;介绍了多铁性磁电材料在存储读头技术方面的应用;并将基于多铁性磁电材料的存储器与其他几种存储器作了简单比较;最后就多铁性磁电材料的存储技术发展面临的挑战进行了总结和归纳。

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Since multiferroic magnetoelectric (ME) material has ferroelectric, ferromagnetic and magnetoelectric properties, it is possible to use this material for the design of storage device. Recent development on the application of single-phase or composite ME material on storage technology was reviewed. The areas were magnetoelectric random access memories (MERAM) with electric writing and magnetic read, magnetoelectric multiple-state storages, other new storages with novel working principles and ME read heads. In addition, the storage devices based on ME materials were compared with other different storage devices, and the challenges with the storage technology were summarized.

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基金项目:
国家自然科学基金(51002020);中央高校基本科研业务费专项资金(ZYGX2009J033)资助项目
作者简介:
施 科(1987—),男,硕士研究生
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