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生长温度对激光分子束外延AlN薄膜的影响
作者:赵丹1 朱俊2 李言荣2 
单位:1. 中国电子科技集团第三十八研究所 合肥 230088 2. 电子科技大学 电子薄膜与集成器件国家重点实验室 成都 610054 
关键词:氮化铝薄膜 外延生长 氧化铝基片 激光分子束外延法 
分类号:O484.1
出版年,卷(期):页码:2011,39(11):107-112
DOI:
摘要:

采用激光分子束外延法在Al2O3基片上制备AlN薄膜。用反射高能电子衍射、X射线衍射和原子力显微镜研究沉积温度对薄膜微结构的影响,通过光致发光谱和透射光谱对六方AlN薄膜的光学性能进行研究。结果表明:沉积温度为450 ℃时,沉积的AlN薄膜为非晶态;沉积温度为650 ℃时,在Al2O3基片上得到c轴单一取向的的六方AlN薄膜,且AlN和Al2O3之间的外延匹配关系为AlN //Al2O3 ,AlN //Al2O3 和AlN(0001)//Al2O3 (0001),这种面内相对旋转30°,可以减小AlN薄膜与Al2O3基片之间的晶格失配度和界面能。此外,650 ℃沉积的AlN的透射率达到85%,禁带宽度为5.6 eV。沉积温度升高到750 ℃时,AlN薄膜的透射率和光学能隙变小。

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AlN films were deposited on Al2O3 substrate by laser molecular beam epitaxy. The effect of depositing temperature on the microstructure of AlN films was investigated by reflection high energy electron diffraction, X-ray diffraction, and atomic force microscope. The optical properties of AlN films were characterized by photoluminescence and transmittance spectra. The results indicate that AlN films deposited at 450 ℃ have an amorphous structure. The epitaxial hexagonal AlN films are obtained when the temperature was increased to 650 ℃. The epitaxial relationship between AlN film and Al2O3 substrate is AlN //Al2O3 , AlN // Al2O3  and AlN (0001)//Al2O3 (0001), respectively. The 30°in-plane rotation between AlN film and Al2O3 substrate could reduce the lattice mismatch and the interface energy. In addition, the transmissivity is 85% and the band gap is 5.6 eV for the AlN films deposited at 650 ℃. The transmissivity and energy band of AlN films would decrease when the deposition temperature increases to 750 ℃.

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基金项目:
杰出青年基金(50425027)资助项目
作者简介:
赵 丹(1983—),男,硕士,助工
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参考文献:

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