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SnO2:Sb透明导电薄膜的制备及光电性能
作者:王贺 魏长平 彭春佳 程果 蔡永秀 李丛昱 
单位:长春理工大学化学与环境工程学院 长春 130022 
关键词:溶胶–凝胶 锑掺杂 薄膜 光电性能 
分类号:O484.4
出版年,卷(期):页码:2012,40(7):945-949
DOI:
摘要:

  要:采用溶胶凝胶法在玻璃基底上制备了Sb掺杂SnO2 (SnO2:Sb)透明导电薄膜。研究了Sb掺杂量、镀膜次数、热处理温度对SnO2:Sb薄膜结构和光电性能的影响,利用X射线衍射仪、Fourier变换红外光谱仪、扫描电子显微镜、四探针电阻仪、分光光度计对薄膜样品进行表征。结果表明: SnO2:Sb薄膜为四方相金红石结构;薄膜结构平整、致密,膜厚与镀膜次数基本成线性关系;在Sb掺杂量为10%,镀膜8次的条件下,薄膜具有最佳的光电性能,方块电阻达105 Ω/□;在玻璃上镀SnO2:Sb薄膜后,近红外波段透过率下降显著,由90%降到5.5%,在可见光波段略有降低,仍保持了较高透过率

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Abstract: Antimony doped tin oxide (SnO2:Sb) films were deposited on glass substrates by a solgel method. The doping amounts of Sb, coating times and heat-treatment temperature influences on the structure and photoelectric properties of SnO2 films. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, four point probe and spectrophotoscopy. The results indicate that the films exhibit a rutile structure. The films are smooth and compact, and the film thickness was correlated to the number of coating. The sheet resistance of SnO2:Sb films is 105 Ω/ under the optimum conditions. The near infrared transmittance of the glass substrates was decreased from 90% to 5.5% after being coated with the SnO2:Sb films at Sb doping of 10% for 8 times.

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基金项目:
吉林省教育厅科技计划项目(200826)资助
作者简介:
第一作者:王 贺(1986—),女,硕士研究生。 通信作者:魏长平(1960—),女,博士,教授
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