硅酸盐学报

抗还原型PZT压电陶瓷的制备与性能

作者：尚勋忠刘越彦孙锐郭金明周桃生常钢何云斌

单位：湖北大学材料科学与工程学院功能材料绿色制备与应用教育部重点实验室武汉 430062

分类号：TM282

出版年,卷(期):页码：2013,41(3):288-291

DOI：

摘要：

摘要：采用固相法制备出可在低氧压和还原性气氛中烧结的压电陶瓷材料。材料最佳组成为：Pb0.95Sr0.05(Zr0.54Ti0.46)O3+0.03% (质量分数) CuO+0.05%Nd2O3+1.00% Sb2O3。通过施主和受主共掺杂，既抑制了烧结过程中氧空位扩散，又避免了Ti4+与自由电子结合转变成为Ti3+，使陶瓷保持了压电性能。结果表明：添加半径合适的稀土元素，是使陶瓷具有抗还原性能的关键之一。当烧结温度为1 050 ℃时，陶瓷压电应变常数d33 = 294 pC/N，平面机电耦合系数kp = 43.56%，相对介电常数εT33/ε0 = 1 333，介电损耗tan δ = 0.019 7。该材料可应用于与Ni、Cu等贱金属低温共烧的叠层压电器件中，能够大大降低器件的成本。

Abstract: A piezoelectric ceramic, which can be sintered under low-oxygen condition and reducing atmosphere, was prepared by a solid state reaction method. The optimal composition was Pb0.95Sr0.05(Zr0.54Ti0.46)O3 with 0.03% in mass CuO, 0.05% Nd2O3 and 1.00% Sb2O3. It was found that through the donor and acceptor co-doping, the diffusion of oxygen vacancies was restrained, and the transformation of Ti4+ to Ti3+ was prevented, thus giving the superior piezoelectric properties of the ceramic. The results show that the addition of proper rare earth elements is closely related to the reduction-resistant performance. When the sintering temperature was 1 050 ℃, the optimum properties of the ceramic were achieved, i.e., d33 = 294 pC/N, kp = 43.56%, tan δ = 0.019 7, and εT33/ε0 = 1 333. This material could be used in the multilayer piezoelectric devices co-fired with base metals at low temperature, by which the production costs could be reduced.

基金项目：

教育部新世纪优秀人才计划(NCET–09–0135)；国家自然科学基金(11175062, 50972041)；武汉市学科带头人计划(200951830550)；湖北省人才项目(2007，2011)资助项目。

作者简介：

第一作者：尚勋忠(1972—)，男，博士，副教授。通信作者：何云斌(1972—)，男，博士，教授。

参考文献：

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