硅酸盐学报

中子辐照半绝缘SiC单晶的光学性质

作者：王鹏飞阮永丰侯贝贝陈敬

单位：天津大学理学院天津 300072

关键词：碳化硅中子辐照光学性质

分类号：O77+4

出版年,卷(期):页码：2013,41(3):353-358

DOI：

摘要：

摘要：利用荧光光谱、紫外–可见–近红外透射光谱和Raman光谱对经1.67 × 1020 n/cm2中子辐照的半绝缘SiC的光学性质进行了研究。结果表明：中子未辐照的和辐照后退火温度低于1 000 ℃的样品未出现任何发射峰；1 200 ℃退火的样品在510、540 和575 nm处出现了3个绿色发射峰，其中，510 和540 nm处的发射峰在经过1 600 ℃退火后依然存在。中子辐照导致SiC的截止波长由393 nm增大到1 726 nm；随退火温度提高，截止波长逐渐减小，并在1 600 ℃退火后完全回复。Raman光谱显示：辐照诱发了许多新的振动模，如187、278、435 和538 cm–1处的Si—Si键振动模，600 、655和709 cm–1处的Si—C键振动模和141 9 cm–1处C—C键振动模。辐照缺陷引起声子限制效应，表现为FTO2/6和FLO0/6Raman特征峰的不对称性展宽和红移。在低于1 000 ℃退火阶段，主要表现为不对称性展宽和红移逐渐减弱；在高于1 000 ℃退火阶段，主要表现为辐照产生的新Raman峰逐渐消失。

Abstract: The optical properties of semi-insulating SiC neutron irradiated up to 1.67 × 1020 n/cm2 were analyzed by photoluminescence (PL) spectroscopy, UV–Vis–Nir transmission spectroscopy and Raman spectroscopy, respectively. The samples neutron irradiated and post-irradiation annealed below 1 000 ℃ had no PL peaks. However, the 510, 540 and 575 nm peaks appeared after thermal treatment at 1 200 ℃. The 510 and 540 nm peaks could maintain after thermal treatment at 1 600 ℃. The neutron irradiation led to the increase of threshold wavelength from 393 nm to 1 726 nm. The threshold wavelength decreased with increasing annealing temperature, and recovered after thermal treatment at 1 600 ℃. Several additional vibration modes appeared after irradiation. The peaks at 187, 278, 435 and 538 cm–1 were related to Si–Si vibration, the peaks at 600, 655, and 709 cm–1 originated from the Si–C vibration, and the peak at 1 419 cm–1 arised from the C–C vibration. The phonon confinement effect was also observed for FTO2/6 and FLO0/6 peaks, showing the asymmetric broadening and red shift. The thermal evolution of Raman spectra with annealing temperature was that the asymmetric broadening and red shift was diminished during annealing at < 1 000 ℃, but the irradiation-produced additional Raman peaks were removed during annealing at > 1 000 ℃.

基金项目：

作者简介：

第一作者：王鹏飞(1981—)，男，博士研究生。通信作者：阮永丰(1946—)，男，教授。

参考文献：

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