硅酸盐学报

中子辐照掺氮6H-SiC晶体的电学性能及退火的影响

单位：1. 天津大学理学院天津 300072 2. 天津商业大学理学院天津 300134

分类号：O77+4

出版年,卷(期):页码：2013,41(6):812-819

DOI：

摘要：

在60～80℃用剂量为1.67×10²⁰n/cm²的全能谱中子对掺氮6H-SiC晶体进行了辐照，对辐照样品从室温至1600℃进行了等时退火，研究了辐照和退火对样品电学性能的影响。大剂量中子辐照在晶体内产生了大量缺陷和损伤，并引起样品的电学性能发生变化，使电阻率升高、介电常数和介电损耗减小。测试表明：在辐照缺陷及其电学性能的退火演化过程中，存在约为1000和1400℃两个特征温度。当退火温度低于1000℃时，随着退火温度的升高，电阻率小幅增加，而介电常数和介电损耗亦下降；在退火温度高于1000℃时，电阻率开始下降。在退火温度高于1400℃时，电阻率急剧地下降，而介电常数和介电损耗快速地增加。以间隙原子和空位为缺陷的主要形式作为辐照损伤的模型，对上述现象做了定性解释。测试还表明，掺氮6H-SiC的介电常数高达3.5×10⁴，这一奇特的物性主要来源于电子的长程迁移极化。

Nitrogen doped 6H-SiC single crystals were irradiated by whole spectral neutrons with a fluence of 1.67×10²⁰n/cm² at 60–80℃. The specimens were isochronally annealed from room temperature to 1600℃. The influences of irradiation and annealing on the electrical properties of the sample were investigated. The massive defects and damages in the sample are induced by the irradiation, resulting in the enormous increase of the resistivity and the decreases of dielectric constant and dielectric loss. The results show that there are two characteristic temperatures in the evolution process of defects and electric properties on the annealing, i.e., 1000℃ and 1400℃, respectively. At the annealing temperature of <1000℃, the resistivity of irradiated sample slightly increases, while the dielectric constant and the dielectric loss decrease with the increase of annealing temperature. At the annealing temperature of >1000℃, the resistivity decreases. The resistivity decreases, but the dielectric constant and the dielectric loss increase at the annealing temperature of >1400℃. These phenomena could be explained through an irradiation damage model based on that the interstitial atoms and vacancies are dominating defects in the irradiated crystal. Also, the dielectric constant of nitrogen doped 6H-SiC is 3.5×10⁴. This peculiar property is mainly formed due to the electronic long range migration polarization.

基金项目：

作者简介：

第一作者：陈敬(1986—)，女，硕士研究生。通信作者：阮永丰(1946—)，男，教授。

参考文献：

[1] TREW R J, YAN J B, MOCK P M. The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications [J]. Proc IEEE, 1991, 79(5): 598–620.

[2] 胡小波, 徐现刚, 王继扬, 等. 6H-SiC单晶的生长于缺陷[J]. 硅酸盐学报, 2004, 32(3): 248–254.

HU Xiaobo, XU Xiangang, WANG Jiyang, et al. J Chin Ceram Soc, 2004, 32(3): 248–254.

[3] 封先峰, 陈治明, 蒲红斌. 6H-SiC单晶锭边缘多晶环的控制[J]. 人工晶体学报, 2010, 39(5): 1124–1140.

FENG Xianfeng, CHEN Zhiming, PU Hongbin. J Synth Cryst (in Chinese) , 2010, 39(5): 1124–1140.

[4] 张维连, 徐岳生. 直拉硅单晶中子辐照后的退火研究[J]. 人工晶体学报, 1994, 23(3): 191–194.

ZHANG Weilian, XU Yuesheng. J Synth Cryst (in Chinese) , 1994, 23(3): 191–194.

[5] NAKATA K, SHIMANUKI S, KATANO Y. Electrical properties of SiC ontaining BeO irradiated with electrons and neutrons[J]. J Nucl Mater, 1988, 155/157: 307–310.

[6] 尚也淳, 张义门, 张玉明. SiC抗辐照特性的分析[J]. 西安电子科技大学学报, 1999, 26(6): 807–810.

SHANG Yechun, ZHANG Yimen, ZHANG Yuming. J Xidian Univ (in Chinese), 1999, 26(6): 807–810.

[7] KATOH Y, KONDO S, SNEAD L L. DC electrical conductivity of silicon carbide ceramics and composites for flow channel insert applications [J]. J Nucl Mater, 2009, 386/388: 639–642.

[8] 吴华, 郝建民, 冯玢, 等. 非接触半绝缘SiC电阻率测试[J]. 半导体技术, 2010, 35(5): 462–464.

WU Hua, Hao Jianmin, FENG Bin, et al. Semicond Technol (in Chinese), 2010, 35(5): 462–464.

[9] 赵国旭. SiC高温电学特性研究[D]. 西安: 西安电子科技大学, 2008.

ZHAO Guoxu. Electrical Characterization measurement of SiC with high temperature (in Chinese, dissertation). Xian: Xidian University, 2008.

[10] 李翰如. 电介质物理导论[M]. 成都: 成都科技大学出版社, 1990: 137.

[11] YANG Y J. Microelectronic Devices [M]. New York: McGraw-Hill, 1988: 11.

[12] PATRICK Lyle, CHOYKE W J. Static dielectric constant of SiC [J]. Phys Rev B, 1970, 2(6): 2255–2256.

[13] 王铎. 碳化硅/聚酰亚胺基低介电常数复合材料制备与特性研究[D]. 西安: 西安理工大学, 2006.

WANG Duo. The preparation and study in characteristic of low-k compound materials of silicon carbride/polymide (in Chinese, dissertation). Xian: Xian University of Technology, 2006.

[14] STRZALKOWSKI I, JOSHI S, CROWELL C R. Dielectric constant and its temperature dependence for GaAs, CdTe, and ZnSe [J]. Appl Phys Lett, 1976, 28: 350–352

[15] MOLLA J, VILA R, HEIDINGER R, et al. Radiation effect on dielectric losses of Au-doped silicon [J]. J Nucl Mater, 1998, 258/263: 1884–1888.

[16] DOGRA Anjana, SINGH M, KUMAR V V Siva, et al, Irradiation effect on dielectric properties of NiMn_0:05Ti_x(Zn, Mg)_xFe₁_._95–2xO₄ ferrite thin films [J]. Nucle Instrum Methods Phys Res, Sect B, 2003, 212: 184–189.

[17] VISWANATHAN E, MURUGARAJ R, SANKAR S, et al. Low temperature dielectric study on swift heavy ion irradiated 6H-SiC crystals [J]. Trans Indian Inst Met, 2011, 64: 305–308.

[18] REMPEL A A, SPRENGEL W, BLAUROCK K, et al. Identification of lattice vacancies two sublattices SiC [J]. Phys Rev Latt, 2002, 89: 185501(1–14).

[19] 阮永丰, 黄丽, 王鹏飞, 等. 中子辐照6H-SiC晶体的退火特性及缺陷观测[J]. 硅酸盐学报, 2012, 40(3): 436–442.

RUAN Yongfeng, HUANG Li, WANG Pengfei, et al. J Chin Ceram Soc, 2012, 40(3): 436–442.

[20] 王鹏飞, 阮永丰, 侯贝贝, 等. 中子辐照半绝缘SiC单晶的光学性质[J]. 硅酸盐学报, 2013, 41(3): 353–358.

WANG Pengfei, RUAN Yongfeng, HOU Beibei, et al. J Chin Ceram Soc, 2013, 41(3): 353–358.

[21] YANO T, MIYAZAKI H, AKIYOSHI M, et al. X-ray diffractometry and high-resolution electron microscopy of neutron-irradiated SiC to a fluence of 1.9×1027 n/m² [J]. J Nucl Mater, 1998, 253: 78–86.

[22] XU Q,YOSHIIE T, OKADA M. Positron annihilation of vacancy-type defects in neutron-irradiated 4H-SiC [J]. J Nucl Mater, 2009, 386/388: 169–172.

[23] 刘开敏, 孟祖祥. 中子嬗变掺杂单晶硅的电学性能[J]. 半导体技术, 1982, 7(2): 14–17.

LIU Kaimin, MENG Zuxiang. Semicond Technol (in Chinese), 1982, 7(2): 14–17.

服务与反馈：

【文章下载】【加入收藏】