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氧分压对室温制备掺铝氧化锌薄膜性能的影响
作者:闫宁宁1 2 3 汪洪1 2 3 刘静1 2 3 左岩1 2 
单位:1. 中国建筑材料科学研究总院 北京 100024 2. 国家玻璃深加工工程技术中心 北京 100024 3. 绿色建筑材料国家重点实验室 北京 100024 
关键词:掺铝的氧化锌 反应磁控溅射 氧分压 透明导电薄膜 
分类号:
出版年,卷(期):页码:2013,41(9):1251-1257
DOI:
摘要:
室温下,采用脉冲直流反应磁控溅射方法在玻璃衬底上制备了掺铝的氧化锌(ZnO:Al, AZO)透明导电薄膜。采用配有λ-sensor氧分压传感器的控制器闭环控制氧分压,研究了氧分压对薄膜结构、表面形貌和光电性能的影响。结果表明:在不同的氧分压下制备的AZO薄膜均为多晶纤锌矿结构,具有[002]择优取向,其晶体呈柱状生长,晶粒之间结合紧密。氧分压为3.36 × 10–2 Pa时,AZO薄膜的性能指数最高,其电阻率为1.15 × 10–3 Ω?cm,相应的载流子浓度为2.1 × 1020/cm3,载流子迁移率为25.8 cm2/(V?s),可见光透射率为79.1%。随着AZO薄膜的载流子浓度由1.03 × 1020 cm–3增加到3.64 × 1020 cm–3,薄膜禁带宽度由3.49 eV增大到3.72 eV。
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Al-doped ZnO (AZO) transparent conductive films on glass substrates were prepared via pulsed DC reactive magnetron sputtering at room temperature. The oxygen partial pressure was controlled by a closed-loop controller with a λ-sensor. The dependence of oxygen partial pressure on the optical, electrical, and structural properties was investigated. The XRD analysis indicated that AZO films deposited under various oxygen partial pressures were a polycrystalline wurtzite structure with a [002] preferred orientation. The dense AZO film with columnar growth was observed on the plan-view. The AZO film deposited under 3.36 × 10–2 Pa oxygen partial pressure has the superior performance with a minimal resistivity of 1.15 × 10–3 Ω?cm, a carrier mobility of 25.8 cm2/(V?s), a carrier concentration of 2.1 × 1020/cm3, and a transmittance of 79.1% in the visible light range. The direct band gap increases from 3.49 eV to 3.72 eV as the carrier concentration increases from 1.03 × 1020/cm3 to 3.64 × 1020/cm3.
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基金项目:
十二五国家科技支撑计划(2011BAE14B01)资助项目。
作者简介:
参考文献:
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