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PH3/SiH4气流量比对N型a-Si:H薄膜微观结构与电学性能的影响
作者:董丹 时惠英 蒋百灵 鲁媛媛 张岩 
单位:1. 西安理工大学材料科学与工程学院 西安 710048 2. 西安黄河光伏科技股份有限公司 西安 710043 
关键词:磷掺杂氢化非晶硅薄膜 磷掺杂比 退火 载流子浓度 电阻率 
分类号:TB321
出版年,卷(期):页码:2013,41(12):1662-1668
DOI:
摘要:
采用等离子体增强化学气相沉积法制备了不同PH3/SiH4气流量比条件下的N型a-Si:H系列薄膜,研究了PH3/SiH4气流量比对N型a-Si:H薄膜微结构和电学性能的影响;同时,对最优PH3/SiH4气流量比条件下的N型a-Si:H薄膜进行了真空退火处理,以研究薄膜晶体结构的改变对其性能的影响。结果表明:随着PH3/SiH4气流量比的增加,N型a-Si:H薄膜的非晶结构没有实质改变,但其电学性能得到明显改善;在最佳的PH3/SiH4气流量比为1.5%时制备的薄膜,经真空退火处理后,N型a-Si:H薄膜的有序度明显提高,电阻率比退火前降低3个数量级。退火处理对薄膜的晶体结构影响较大,从而对薄膜电学性能的改善更为显著。
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A series of N-type a-Si:H films were prepared by a plasma enhanced chemical vapor deposition method at different PH3/SiH4-doped flow ratios. The N-type a-Si:H film with the optimal PH3/SiH4 flow ratio was annealed in vacuum. The influence of PH3/SiH4 flow ratio on the microstructures and properties of a-Si:H films was investigated. The results indicate that the microstructure of N type a-Si:H films has no substantial change, but the electrical properties improves when PH3/SiH4 flow ratio increases. The a-Si:H film sample prepared at an optimal PH3/SiH4 flow ratio of 1.5%. The order degree of the film after vacuum annealing increases. The resistivity of the film after annealing is decreased by 3 orders of magnitude. The annealing treatment of the film has an influence on the crystal structure, thus improving the electrical properties of the film.
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基金项目:
国家自然科学基金项目(51271144)资助
作者简介:
第一作者:董 丹(1988—),女,硕士研究生。 通信作者:时惠英(1959—),女,教授。
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