硅酸盐学报

Ce和Sr复合掺杂对Bi₄Ti_2.92Nb_0.08O_12.04高温无铅压电陶瓷的影响

作者：陈云婧江向平陈超李小红涂娜

单位：景德镇陶瓷学院材料科学与工程学院江西省先进陶瓷材料重点实验室江西景德镇 333001

关键词：铋层状压电陶瓷微观结构电性能复合掺杂

分类号：TQ174

出版年,卷(期):页码：2014,42(7):00-00

DOI：

摘要：

采用固相法制备了Ce和Sr复合掺杂的Bi4Ti2.92Nb0.08O12.04 (BTN + 0.5xwt%CeO2 + 0.5xwt%SrCO3, 0.0 ≤ x ≤ 1.5) 铋层状高温无铅压电陶瓷，研究了不同含量的Ce和Sr掺杂对BTN系陶瓷微观结构及电性能的影响。结果表明所有样品均为单一的铋层状结构相，Ce和Sr的引入明显提高了陶瓷的压电性能。当掺杂量x = 0.9时，样品具有最佳性能：压电常数d33 = 29 pC/N，平面机电耦合系数kp = 8.77%，介电损耗tanδ = 0.13%，剩余极化强度Pr = 15.87 μC•cm-2和居里温度Tc = 627 ℃。此外，该组分陶瓷样品具有良好的压电稳定性，表明该材料在高温领域下具有良好的应用前景。

Bismuth layer-structured high-temperature lead-free piezoelectric ceramics of Ce and Sr co-doped Bi4Ti2.92Nb0.08O12.04 (BTN + 0.5xwt%CeO2 + 0.5xwt%SrCO3, 0.0 ≤ x ≤ 1.5) were fabricated by a solid-state reaction method. The effect of doping content of Ce and Sr on the microstructure and electrical properties of the BTN ceramics was investigated. The results show that all the ceramic samples have a single phase of bismuth oxide layered structure. The piezoelectric activity of the ceramics is improved via the modification of Ce and Sr. The ceramic with the doping content x of 0.9exhibites the optimum electrical properties, i.e., the piezoelectric constant d33 of 29 pC/N, planar electromechanical coupling factor kp of 8.77%, dielectric loss tanδ of 0.13% , remanent polarization Pr of 15.87 μC/cm2 and the Curie temperature Tc of 627 ℃. In addition, the component ceramic sample possesses a high piezoelectric stability, showing that the ceramic is a potential material for high-temperature applications.

基金项目：

国家自然科学基金(51062005, 91022027)；江西省自然科学基金(20132BAB202002)；江西省高等学校“先进陶瓷材料”科技创新团队、江西省主要学科学术和技术带头人培养对象计划项目(2010DD00800)；江西省教育厅项目(GJJ3630, GJJ3628)。

作者简介：

第一作者：陈云婧(1990- )，女，硕士研究生。通讯作者：江向平*(1964- )，男，教授。

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