硅酸盐学报

高分子辅助沉积法在镍基片上制备的BaTiO3薄膜的漏电机制

作者：李洋1 高敏1 杜辉1 张胤1 林媛1

单位：1. 电子科技大学电子薄膜与集成器件国家重点实验室成都 610054 2. 东莞电子科技大学电子信息工程研究院广东东莞 523808

分类号：中图分类号：TB303

出版年,卷(期):页码：2014,42(10):0-0

DOI：

摘要：

摘要：采用高分子辅助沉积法在多晶镍衬底上，以氧化镍作为缓冲层，生长了多晶钛酸钡(BaTiO3, BTO)薄膜。对其漏电特性测试及分析发现，在测试电压区间和极性不同时，分别具有不用的漏电机制，可分别用Frankel-Pool emission, Space Charge Limited Current (SCLC) 与 Schottky emission等机制来描述。由于界面缓冲层分解以及界面扩散等原因，BTO/Ni界面呈现欧姆接触，而Au/BTO界面呈现Schottky势垒接触。通过测量不同温度下的漏电流大小，得到Au/BTO界面的有效势垒为0.32 eV，从而得到Au/BTO/Ni能带结构图。利用一阶线性电路模型对其界面电阻与体电阻进行计算，得到的界面电阻与体电阻大小及变化趋势与实验及理论相符合。

Abstract: Barium titanate (BTO) thin films were deposited on polycrystalline Ni foils by a polymer assisted deposition (PAD) technique with NiOx as a buffer layer. The leakage current of the as-prepared BTO thin films was investigated. The possible leakage processes were discussed based on the Frankel-Pool emission, space charge limited current (SCLC) and the Schottky emission mechanisms. The interface of BTO/Ni is Ohmic contact due to the effects of interface diffusion and buffer layer decomposition, and the interface of Au/BTO is Schottky contact. The effective barrier height of Au/BTO is deduced to be 0.32 eV based on the data of leakage current at various temperatures. A schematic energy band diagram of the Au/BTO/Ni capacitor was proposed. The interface resistance and bulk resistance in the films were calculated by the first-order linear circuit model. It is indicated that the theoretic data are consistent with the experimental results.

基金项目：

基金项目：国家自然科学基金(51372034)；中央高校基本科研业务费(ZYGX2011J028)；广东省创新团队(201001D0104713329)资助项目。

作者简介：

第一作者：李洋(1989—)，男，硕士研究生。通信作者：高敏(1983—)，女，讲师。

参考文献：

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