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高分子辅助沉积法在镍基片上制备的钛酸钡薄膜的漏电机制
作者:李洋1 高敏1 杜辉1 张胤1 林媛1 2 
单位:1.电子科技大学 电子薄膜与集成器件国家重点实验室 成都610054  2.东莞电子科技大学电子信息工程研究院 广东东莞523808 
关键词:高分子辅助沉积 钛酸钡薄膜 漏电机制 镍衬底 
分类号:TB303
出版年,卷(期):页码:2014,42(10):1240-1246
DOI:10.7521/j.issn.0454-5648.2014.10.05
摘要:

 采用高分子辅助沉积法在多晶镍衬底上,以氧化镍作为缓冲层,生长了多晶钛酸钡(BaTiO3, BTO)薄膜。对其漏电特性测试及分析发现,在测试电压区间和极性不同时,分别具有不同的漏电机制,可分别用Frankel-Poolemission, spacechargelimitedcurrent (SCLC)与Schottkyemission等机制来描述。由于界面缓冲层分解以及界面扩散等原因,BTO/Ni界面呈现Ohmic接触,而Au/BTO界面呈现Schottky势垒接触。通过测量不同温度下的漏电流大小,得到Au/BTO界面的有效势垒为0.32eV,从而得到Au/BTO/Ni能带结构图。利用一阶线性电路模型对其界面电阻与体电阻进行计算,得到的界面电阻与体电阻大小及变化趋势与实验及理论相符合。

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  Barium titanate (BTO) thin films were deposited on polycrystalline Ni foils by a polymer assisted deposition (PAD) technique with NiOx as a buffer layer. The leakage current of the as-prepared BTO thin films was investigated. The possible leakage processes were discussed based on the Frankel-Pool emission, space charge limited current (SCLC) and the Schottky emission mechanisms. The interface of BTO/Ni is Ohmic contact due to the effects of interface diffusion and buffer layer decomposition, and the interface of Au/BTO is Schottky contact. The effective barrier height of Au/BTO is deduced to be 0.32eV based on the data of leakage current at various temperatures. A schematic energy band diagram of the Au/BTO/Ni capacitor was proposed. The interface resistance and bulk resistance in the films were calculated by the first-order linear circuit model. It is indicated that the theoretic data are consistent with the experimental results.

 
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基金项目:
基金项目:国家自然科学基金(51372034);中央高校基本科研业务费(ZYGX2011J028);广东省创新团队(201001D0104713329)资助项目。
作者简介:
第一作者:李 洋(1989—),男,硕士研究生。 通信作者:高 敏(1983—),女,博士,讲师。
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参考文献:

 参考文献:

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