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碳化硅量子点表面物化特性调控及其光学特性
作者:康杰1 宋月鹏1 2 3 朱彦敏1 高东升2 郭晶1 3 许令峰1 KIMHyoungseop3 
单位:1. 山东农业大学机械与电子工程学院 山东省园艺机械与装备重点实验室 山东泰安 271018  2. 山东农业大学园艺科学与工程学院 山东泰安 271018 3. 浦项工科大学材料科学与工程学院 韩国浦项 790784 
关键词:碳化硅量子点 表面物化特性 光学特性 腐蚀法 
分类号:
出版年,卷(期):页码:2015,43(4):0-0
DOI:
摘要:

 采用化学偶联法,通过调整腐蚀剂组分及其相对含量,一步法实现了碳化硅量子点(SiC-QDs)表面物化特性的有效调控。研究表明,经硝酸(HNO3)和氢氟酸(HF)混合腐蚀剂腐蚀纳米β-SiC粉末,通过超声空化破碎分散及高速离心处理,可获得SiC-QDs水相溶液,并一步法实现了表面修饰,在其表面形成了—COO、—OH等亲有机物功能基团。采用浓硫酸(H2SO4)为偶联剂,制备出表面具有巯基(—SH)的SiC-QDs水相溶液。腐蚀剂组分的相对含量对于SiC-QDs的光致发光强度与表面巯基的形成影响较大。在340 nm光波长为激发下,SiC-QDs具有最大的发光强度,随着腐蚀剂中H2SO4含量的增加,其光致发光强度呈现降低趋势。当腐蚀剂的体积比为V(HF):V(HNO3):V(H2SO4)=6:1:1时,制备的水相SiC-QDs表面既能稳定耦合―SH,又可以获得较高的光致发光强度。另外,对表面物化特性调控及其形成机制进行了分析研究。

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 One-step effective regulation of physicochemical characteristics on the surface of SiC quantum dots (QDs) was obtained by a chemical coupling method via the adjustment of the component and relative content of etchant. The results indicate that the aqueous SiC-QDs are prepared with SiC nanoparticles etched in a mixed chemical etchant of nitric acid (HNO3) and hydrofluoric acid (HF) via ultrasonic cavitation dispersion and high-speed centrifugal treatment. Some hydrophilic organic functional groups, such as carboxyl (―COO), hydroxyl (―OH) and so on, on the surface of SiC-QDs are formed in the process of fabrication. In addition, hydrosulphonyl (―SH) is also prepared via one-step for sulfuric acid (HNO3) as a coupling reagent and the addition of the mixed acid (i.e., HF and HNO3). The component and relative content of mixed-acid etchant can affect the hydrosulphonyl formation and photoluminescence (PL) intensity. The results show that the maximum light intensity of SiC-QDs is emitted at a 340-nm exciting light wavelength, and the PL intensity decreases with increasing the content of H2SO4. The aqueous SiC-QDs surface prepared can be stable and coupled with ―SH, thus obtaining a high photoluminescence strength, when the volume ratio of H2SO4 to HNO3 is 1: 1 (i.e., V(HF):V(HNO3):V(H2SO4)=6:1:1). In addition, the regulation of physicochemical characteristics on the surface of SiC-QDs and the formation mechanism are also analyzed.

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基金项目:
基金项目:山东省科技发展计划项目(2014GGB01380);“十二五”国家支撑计划项目(2011BAD12B02);山东省博士后创新基金(201203101);中国博士后科学基金(2013M53163)项目。
作者简介:
第一作者:康杰(1985—),男,硕士研究生。 通信作者:宋月鹏(1971—),男,博士,副教授。
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