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直流磁控溅射工艺对 ITO 薄膜光电性能的影响
作者:彭寿1 2 蒋继文1 2 李刚1 2 张宽翔1 2 杨勇1 2 姚婷婷1 2 金克武1 2 曹欣1 2 徐根保1 2 王芸1 2 
单位:1. 浮法玻璃新技术国家重点实验室 安徽 蚌埠 233000 2. 蚌埠玻璃工业设计研究院 安徽 蚌埠 233018 
关键词:直流磁控溅射 氧化铟锡薄膜 衬底温度 溅射功率 
分类号:TB34
出版年,卷(期):页码:2016,44(7):987-994
DOI:
摘要:
采用直流磁控溅射系统在玻璃衬底上制备了氧化铟锡(ITO)薄膜。通过 X 射线衍射仪、扫描电子显微镜、分光光度 计、Hall 效应测试系统研究了热退火与原位生长、衬底温度、直流溅射功率对薄膜结构、表面形貌以及光电性能的影响。结 果表明:与室温生长并经 410 ℃热退火后的薄膜相比,410 ℃原位生长可获得光电性能更好的薄膜;随着衬底温度的增加, 电阻率单调减小,光学吸收边出现蓝移;在溅射功率为 85 W 时薄膜的光电性能达到佳。在衬底温度为 580 ℃、溅射功率 为 85 W 的工艺条件下,可制备出电阻率为 1.4×10–4 ?·cm、可见光范围内平均透过率为 93%的光电性能优异的 ITO 薄膜。
The indium tin oxide (ITO) thin films were deposited on glass substrates in DC magnetron sputtering system. The effects of post-annealing versus in-situ heating, substrate temperatures and DC power on the structural, morphological, electrical and optical properties of ITO thin films were investigated by X-ray diffraction scanning electronic microscopy, UV-Vis spectrophotometry and Hall effect analysis, respectively. The results show that the better electrical and optical properties of the ITO film prepared in situ at a substrate temperature of 410 ℃ are obtained, compared to the sample prepared at room temperature and annealed in air at 410 . The ℃ resistivity of the ITO films monotonically decreases and the cut-off wavelength exhibits an obvious blue shift. The optimum electrical and optical properties of ITO films deposited are achieved when the substrate temperature and sputtering power is 580 and 85 W. ℃ The ITO thin films with a minimum resistivity of 1.4×10?4 ?·cm and a maximum mean visible transmittance of 93% can be prepared under the optimized process condition.
基金项目:
安徽省科技攻关计划项目(1301021015)资助。
作者简介:
彭 寿(1960—),男,教授级高级工程师。
参考文献:
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