首页期刊信息编委及顾问期刊发行联系方式使用帮助常见问题ENGLISH
位置:首页 >> 正文
含Ti–Al阻挡层的硅基Na0.5Bi0.5TiO3电容器的结构与电学性能
作者:宋建民1 2 罗来慧3 宋安英1 魏丽静1 4 代秀红1 方晓燕1 李振娜1 刘保亭1 
单位:1. 河北省光电信息材料重点实验室 河北大学物理科学与技术学院 河北 保定 071002 2. 河北农业大学理学院 河北 保定 071001 3. 宁波大学理学院 浙江 宁波 3152111  4. 华北电力大学科技学院  河北 保定 071051 
关键词:钛酸铋钠薄膜 铁电电容器 剩余极化强度 漏电流 
分类号:O484
出版年,卷(期):页码:2016,44(10):1477-1481
DOI:
摘要:

通过射频磁控溅射法和脉冲激光沉积法,以Ti–Al为阻挡层,在(001)Si衬底上制备了La0.5Sr0.5CoO3(LSCO)/ Na0.5Bi0.5TiO3(NBT)/LSCO (LSCO/NBT/LSCO)异质结铁电电容器。研究了Na0.5Bi0.5TiO3铁电薄膜的结构和物理性能。结果表明:Ti–Al阻挡层为非晶结构,NBT薄膜结晶质量良好。在1 500 kV/cm驱动电场下,LSCO/NBT/LSCO电容器呈现饱和的电滞回线,具有较大的剩余极化强度(47.9 μC/cm2)和较小的脉宽依赖性,而且抗疲劳特性和保持特性良好。此外,漏电机制研究表明:当外加电场小于400 kV/cm时,LSCO/NBT/LSCO电容器满足欧姆导电机制,在电场大于400 kV/cm时,满足空间电荷限流传导机制。
 

La0.5Sr0.5CoO3(LSCO)/Na0.5Bi0.5TiO3/La0.5Sr0.5CoO3 (LSCO/NBT/LSCO) ferroelectric capacitor heterostructure was fabricated on (001)Si substrate with amorphous Ti–Al film as a diffusion barrier layer, in which the LSCO and Ti-Al films both were prepared by magnetron sputtering (MS), and the NBT was prepared by a pulsed laser deposition method (PLD). The structural and physical properties of Na0.5Bi0.5TiO3 film were characterized. The results show that the Ti-Al barrier is amorphous, and the NBT film consists of the crystallines. The LSCO/NBT/LSCO capacitor presents a saturated hysteresis loop, a high remnant polarization (i.e., 47.9 μC/cm2), a small pulse width dependence, good fatigue and retention characteristics at an applied field of 1 500 kV/cm. Moreover, the leakage mechanism of the LSCO/NBT/LSCO ferroelectric capacitor was investigated. The LSCO/NBT/LSCO capacitor has the Ohm conduction behavior at applied fields of < 400 kV/cm and bulk-limited space charge-limited conduction (SCLC) at the applied fields of > 400 kV/cm.
 

基金项目:
国家自然科学基金项目(11374086);河北省自然科学基金项目(E2014201188, E2014201063);保定市科技局基金项目(15ZG048);河北农业大学(ZD201614)资助项目。
作者简介:
宋建民(1976—),男,博士研究生。
参考文献:

[1] SMOLENSKII G A, ISUPOV V A, AGRANOVSKAYA A I, et al. New ferroeleetrics complex composition[J]. Sov Phys-Solid State, 1961, 2(11): 2651–2654.
[2] SUCHANICZ J, POPRAWSKI R, MARYJASIK S. Some properties of Na0.5Bi0.5TiO3[J]. Ferroelectrics, 1997, 192: 329–333.
[3] DARYAPURKAR A S, KOLTE J T, APTA P R, et al. Structural and electrical properties of sodium bismuth titanate Na0.5Bi0.5TiO3 thin films optimized using the Taguchi approach[J]. Ceram Int, 2014, 40(1): 2441–2450.
[4] LI M, PIETROWSKI M J, DE SOUZA R A, et al. A family of oxide ion conductors based on the ferroelectric perovskite Na0.5Bi0.5TiO3[J]. Nat Mater Lett, 2014, 13(1): 31–35.
[5] TANG X G, WANG J, WANG X X, et al. Preparation and electrical properties of highly (111)-oriented (Na0.5Bi0.5)TiO3 thin films by a sol-gel process[J]. Chem Mater, 2004, 16(25): 5293–5296.
[6] REMONDI F, MALIC B, KOSEC M, et al. Synthesis and crystallization pathway of Na0.5Bi0.5TiO3 thin film obtained by a modified sol-gel route[J]. J Eur Ceram Soc, 2007, 27(13): 4363–4366.
[7] ZHOU Z H, XUE J M, LI W Z, et al. Leakage current and charge carriers in Na0.5Bi0.5TiO3 thin film[J]. J Phys: Appl Phys, 2005, 38: 642–648.
[8] BOUSQUET M, DUCLERE J R, GAUTIER B, et al. Electrical properties of (110) epitaxial lead-free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition: Macroscopic and nanoscale data[J]. J Appl Phys, 2012, 111: 104106(1–13).
[9] BOUSQUET M, DUCLERE J R, CHAMPEAUX C, et al. Macroscopic and nanoscale electrical properties of pulsed laser deposited (100) epitaxial lead-free Na0.5Bi0.5TiO3 thin films[J]. J Appl Phys, 2010, 107: 034102(1–12).
[10] DARYAPURKAR A S, KOLTE J T, GOPALAN P. Influence of oxygen gas pressure on phase, microstructure and electrical properties of sodium bismuth titanate thin films grown using pulsed laser deposition[J]. Thin Solid Films, 2015, 579: 44–49.
[11] CAO J L, SOLBACH A, KLEMRADT U, et al. Probing fatigue in ferroelectric thin films with subnanometer depth resolution[J]. Appl Phys Lett, 2007, 91(7): 072905(1–3).
[12] 贾冬梅, 刘保亭, 彭增伟, 等. (La0.5Sr0.5)CoO3为电极的Pb(Zr0.4Ti0.6)O3和Pb(Zr0.2Ti0.86)O3铁电电容器结构及电学性能[J]. 人工晶体学报, 2013, 42(1): 129–133.
JIA Dongmei, LIU Baoting, PENG Zengwei, et al. J Synth Cryst (in Chinese), 2013, 42(1): 129–133.
[13] AGGARWAL S, NAGARAJ B, JENKINS I G, et al. Correlation between oxidation resistance and crystallinity of Ti–Al as a barrier layer for high-density memories[J]. Acta Mater, 2000, 48(13): 3387–3394.
[14] YANG H, JAIN M, SUVOROVA N A, et al. Temperature-dependent leakage mechanisms of Pt/BiFeO3/SrRuO3 thin film capacitors[J]. Appl Phys Lett, 2007, 91: 072911(1–3).
[15] HEJAZI M M, and SAFARI A. Temperature-dependent leakage current behavior of epitaxial Na0.5Bi0.5TiO3-based thin films made by pulsed laser deposition[J]. J Appl Phys, 2011, 110: 103710(1–5).
[16] AGGARWAL f Phase Equilibria and S, DHOTE A M, LI H, et al. Conducting barriers for vertical integration of ferroelectric capacitors on Si[J]. Appl Phys Lett, 1999, 74(2): 230–232
[17] LIU B T, ZHAO D Y, XING J Z, et al. Ultrathin amorphous Ti–Al film used as a diffusion barrier for copper metallization[J]. Appl Phys A, 2013, 111: 841–844.
[18] LIU B T, CHEN J E, SUN J, et al. Oxygen vacancy as fatigue evidence of La0.5Sr0.5CoO3/PbZr0.4Ti0.6O3/La0.5Sr0.5CoO3 capacitors[J]. EPL, 2010, 91: 67011(1–5).
[19] AUCIELLO O, SCOTT J F, RAMESH R. The physics of ferroelectric memories[J]. Phys Today, 1998, 51(7): 22–27.
[20] EDERER C, SPALDIN N A. Effect of epitaxial strain on the spontaneous polarization of thin film ferroelectrics[J]. Phys Rev Lett, 2005, 95(25): 257601(1–5).
[21] NAGARAJ B, AGGARWAL S. Leakage current mechanisms in lead-based thin film ferroelectric capacitors[J]. Phys Rev B, 1999, 59: 16022–16026.
[22] WANG S Y, CHENG B L, WANG C, et al. Reduction of leakage current by Co doping in Pt/Ba0.5Sr0.5TiO3/Nb-SrTiO3 capacitor[J]. Appl Phys Lett, 2004, 84(20): 4116–4118.
[23] QI Y J, LU C J, ZHANG Q F, et al. Improved ferroelectric and leakage properties in sol–gel derived BiFeO3/Bi3.15Nd0.85Ti3O12 bi-layers deposited on Pt/Ti/ SiO2/Si[J]. J Phys D: Appl Phys, 2008, 41: 1–4.
[24] KHAN M A, COMYN T P, BELL A J. Leakage mechanisms in bismuth ferrite-lead titanate thin films on Pt /Si substrates[J]. Appl Phys Lett, 2008, 92: 072908(1–3).

服务与反馈:
文章下载】【加入收藏
中国硅酸盐学会《硅酸盐学报》编辑室
京ICP备10016537号-2
京公网安备 11010802024188号
地址:北京市海淀区三里河路11号    邮政编码:100831
电话:010-57811253  57811254    
E-mail:jccs@ceramsoc.com