硅酸盐学报

Nd3+掺Na0.25K0.25Bi2.5Nb2O9压电陶瓷的结构与性能

作者：罗雨涵江向平陈超涂娜陈云婧江兴安

单位：景德镇陶瓷大学材料科学与工程学院江西省先进陶瓷材料重点实验室江西景德镇 333001

关键词：铋层状压电陶瓷 Raman 光谱阻抗谱

分类号：TQ174

出版年,卷(期):页码：2017,45(3):346-353

DOI：10.14062/j.issn.0454-5648.2017.03.04

摘要：

采用固相法制备 Na0.25K0.25Bi2.5–xNdxNb2O9(NKBN–xNd3+，0≤x≤0.4，x 为摩尔分数)铋层状无铅压电陶瓷，研究了不同 Nd3+掺杂量对 NKBN–xNd 陶瓷显微结构、电学性能的影响及 NKBN–0.20Nd3+陶瓷高温下的电导行为。结果表明：所有样品均为单一的铋层状结构；当 Nd3+的掺杂量 x 为 0.02 时，样品的晶粒尺寸减小并趋于均匀，致密度提高；适量的 Nd3+掺杂能降低样品的介电损耗，提高 NKBN 陶瓷的压电常数 d33。NKBN–0.20Nd3+陶瓷样品的电学性能最佳：压电常数 d33=24 pC/N，机械品质因数 Qm=2 449，tanδ=0.40%，2Pr=1.11 μC/cm2。NKBN–0.20Nd3+样品的阻抗谱表明：在高温区域陶瓷的晶粒对电传导起主要作用，当温度高于 600 ℃时，样品主要表现为本征电导，NKBN–0.20Nd3+和NKBN 的电导活化能分别为 1.85 和1.64 eV。

Na0.25K0.25Bi2.5–xNdxNb2O9(NKBN–xNd, 0≤x≤0.40) bismuth layered structure lead-free piezoelectric ceramics were prepared by a solid-state reaction method. Effect of Nd3+ doping amount on the microstructure, electrical properties of NKBN–xNd ceramics was investigated. The high-temperature conductive behavior of NKBN-0.20Nd ceramic was analyzed. The results show that all the samples possess a single bismuth layered structure. When the Nd3+ doping content x is 0.02, the average grain size decreases, the grain size distribution becomes uniform and the density increases. A appropriate content of Nd3+ leads to the decrease of tanδ and the increase of d33. The NKBN–0.20Nd sample presents the optimal piezoelectric performance, i.e., d33=24 pC/N, Qm=2 449, tanδ=0.40%, 2Pr=1.11 μC/cm2. According to the impedance spectra of the NKBN–0.20Nd sample, the grain interior makes a major contribution to the electrical conduction process at a high temperature. At > 600 ℃, the intrinsic conduction plays a dominant role in the samples. The calculated activation energy of NKBN–0.20Nd and NKBN samples is 1.85 and 1.64 eV, respectively.

基金项目：

国家自然科学基金(51562014，51262009)；江西省自然科学基金(20133ACB20002，20142BAB216009)；江西省高等学校“先进陶瓷材料”科技创新团队；江西省教育厅科技项目(GJJ150911，GJJ150931，GJJ150933)资助。

作者简介：

罗雨涵(1993—)，女，硕士研究生。

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