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光学浮区法生长掺铟氧化镓单晶及其性能
作者:吴庆辉1 4 唐慧丽2 3 苏良碧1 4 罗平2 3 钱小波1 4 吴锋2 3 徐军2 3 
单位:1. 中国科学院上海硅酸盐研究所人工晶体研究中心 上海 201800 2. 同济大学物理科学与工程学院 上海20092 3. 上海蓝宝石单晶工程技术研究中心筹 上海 201899 4. 中国科学院上海硅酸盐研究所 透明光功能无机材料重点实验室 上海 201899 
关键词:铟掺杂氧化镓单晶 晶体生长 浮区法 
分类号:O782
出版年,卷(期):页码:2017,45(4):548-552
DOI:10.14062/j.issn.0454-5648.2017.04.09
摘要:

 采用光学浮区法生长了尺寸 (7~9 mm)×(30~35 mm)的β-Ga2O3:In单晶。X射线衍射物相分析表明,β-Ga2O3:In单晶仍属于单斜晶系。研究了不同In掺杂量的β-Ga2O3:In单晶的吸收光谱和电学性能。结果表明:与纯β-Ga2O3单晶相比,β-Ga2O3:In单晶在红外波段存在明显吸收。β-Ga2O3:In单晶的电导率在10–2量级,Holl载流子浓度可以达到6×1019/cm2,说明掺杂In3+对β-Ga2O3单晶的电学性能有明显改善。

 

 β-Ga2O3:In single crystal with 30?35 mm in length and 7?9 mm in diameter was grown by an optical floating zone method. Based on the X-ray diffraction analysis, β-Ga2O3:In single crystal obtained belongs to a monoclinic crystal system. The absorption spectra and electric properties of β-Ga2O3:In crystal doped with different mole fractions of In3+ were investigated. The results indicate that compared to pure β-Ga2O3 crystal, β-Ga2O3:In single crystal has an intense absorption in the infrared band. The conductivity of β-Ga2O3:In single crystal is above 10–2 S/cm, and the carrier density can achieve 6×1019/cm2. It is indicated that the doping of In3+ could improve the electrical properties of the β-Ga2O3 single crystal.

 
基金项目:
国家自然科学基金项目(91333106);上海科委科技攻关项目(13521102700);上海蓝宝石单晶工程技术研究中心(筹) (14DZ2252500)资助项目;中央高校基本科研业务费专项资金项目(2015KJ040, 1370219229)。
作者简介:
吴庆辉(1991—),男,硕士研究生。
参考文献:

 [1] MINAMI T. New n-type transparent conducting oxides [J]. MRS Bull, 2000, 25(8): 38–44. 

[2] TIPPINS H H. Optical Absorption and photoconductivity in the band edge of β-Ga2O3 [J]. Phys Rev A, 1965, 140 (1): 316–319. 
[3] MATSUMOTO T, AOKI M, KINOSHITA A, et al. Absorption and reflection of vapor grown single crystal platelets of β-Ga2O3 [J]. Appl Phys, 1974, 13: 1578–1582. 
[4] Ueda, Naoyuki, Hosono, et al. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals[J]. Appl Phys Lett, 1997, 71(7): 
933–935.
[5] CHASE A B. Growth of β-Ga2O3 by the verneuil technique [J]. J Am Ceram Soc, 1964, 47(9): 470–475.
[6] TOMM Y, REICHE P, KLIMM D, et al. Czochralski grown Ga2O3 crystal [J]. J Cryst Growth, 2000, 220: 510–514.
[7] AIDA Hideo, NISHIGUCHi Kengo, TAKEDA Hidetoshi, et al. Growth of β-Ga2O3 single crystals by the edge-defined film fed growth method [J]. Jpn J Appl Phys, 2008, 47(11): 8506–8509.
[8] VILLORA E G, SHIMAMURA K, YOSHIKAWA Y, et al. Large-size β-Ga2O3 single crystals and wafers [J]. J Cryst Growth, 2004, 270(3/4): 420–426. 
[9] MOHAMED M, IRMSCHER K, JANOWITZ C, et al. Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3 [J]. Appl Phys Lett, 2012, 101(13): 132106(1–5).
[10] ZHONG M, WEI Z, MENG X, et al. High-performance single crystalline UV photodetectors of β-Ga2O3 [J]. J Alloy Compd, 2015, 619: 572–575
[11] BARTIC M, BABAN C I, SUZUKI H, et al. β-gallium oxide as oxygen gas sensors at a high temperature[J]. J Am Ceram Soc, 2007, 90(9): 2879–2884.
[12] TEHERANI F H, LOOK D C, ROGERS D J, et al. β-Ga2O3 and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga2O3 potential for next generation of power devices[J]. Proc SPIE, 2014, 8987: 89871U (1–12).
[13] VI?LLORA E N G, SHIMAMURA K, YOSHIKAWA Y, et al. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping [J]. Appl Phys Lett, 2008, 92(20): 202120(1–3).
[14] SUZUKI N, OHIRA S, TANAKA M, et al. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal [J]. Phys Status Solidi C, 2007, 4(7): 2310–2317.
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