硅酸盐学报

六面顶低温超高压烧结SiC–Al2O3–Y2O3陶瓷性能研究

作者：铁健柳馨铁生年

分类号：TB383

出版年,卷(期):页码：2017,45(6):841-846

DOI：10.14062/j.issn.0454-5648.2017.06.14

摘要：

以微纳米SiC为原料，采用六面顶压机在1 250 ℃、4.5 GPa、无烧结助剂、不同保温时间条件下烧结SiC陶瓷，优化出最佳保温时间为6 min。采用不同添加量Al2O3、Y2O3(0~15%，质量分数)烧结助剂超高压烧结SiC陶瓷。用X射线衍射、场发射扫描电子显微镜、X射线能谱分析、显微硬度及密度测试对SiC高压烧结体进行了表征。结果表明：同时添加Al2O3和Y2O3为有效低温烧结助剂，在低温超高压烧结条件下，掺杂不同比例烧结助剂的SiC陶瓷产生的新相为Al2Y4O9。其中，添加7.5% Al2O3、7.5% Y2O3，经1 250 ℃、4.5 GPa保温保压6 min超高压烧结条件下，样品相对密度达99.9%，显微硬度可达到2 570 HV。

High density SiC ceramic was fabricated with pure SiC micro- and nano-powders in a hinge-type cubic-anvil press method at 4.5 GPa and 1 250 ℃ for an optimum heat-preserving time of 6 min. SiC ceramic was sinterred at a ultrahigh pressure and different amounts of Al2O3, Y2O3 (0-15% in mass fraction) as sintering aids. The samples were characterized by X-ray diffraction, field emission electron microscopy, X-ray energy spectroscopy, micro-hardness and density tests, respectively. The result shows that the Al2O3 and Y2O3 are effective in low-temperature sintering. At a low temperature and a ultrahigh pressure, SiC ceramic can appear a phase of Al2Y4O9. The relative density of sample sintered with Al2O3 of 7.5% and Y2O3 of 7.5% at 4.5 GPa and 1 250 ℃ for 6 min is 99.9%, and the micro-hardness can reach 2 570 HV.

基金项目：

青海省重点实验室发展专项资金(2015-Z-Y02)。

作者简介：

铁健(1990—)，男，硕士研究生。

参考文献：

[1] 江东亮. 碳化硅基复合材料[J]. 无机材料学报, 1995, 10(2): 151–163.

JIANG Dongliang.Silicon carbide based composites[J]. J Inorg Mater(in Cheinese), 1995, 10(2): 151–163.

[2] HILLERY M T. Properties of silicon carbide[J]. Eng Sci Educ J, 1997, 6(6): 212–212.

[3] VASSEN R, KAISER A, STOVER D.Processing and properities of nanograin silicon carbide[J]. J Am Ceram Soc, 1999, 82(10): 2585–2593.

[4] 郭晓明, 闫永杰, 陈健, 等. 挤出成型碳化硅陶瓷的力学性能和显微结构[J]. 无机材料学报, 2009, 24(6): 1155–1158.

GUO Xiaoming,YAN Yongjie,CHEN Jian,et al.J Inorg Mater(in Cheinese), 2009, 24(6): 1155–1158.

[5] 杨晓, 黄政仁, 刘学建, 等. 常压烧结碳化硅陶瓷的表面裂纹对其力学性能的影响[J]. 硅酸盐学报, 2014, 42(7): 841–845.

YANG Xiao, HUANg Zhengren, LIU Xuejian, et al. J Chin Ceram Soc, 2014, 42(7): 841–845.

[6] BAUD S, THEYENOT F, CHATILLON C. High temperature sintering of SiC with oxide additives:‖. Vaporization processes in powder beds and gas-phase analysis by mass spectrometry[J]. J Eur Ceram Soc, 2003, 23(1): 9–18.

[7] BHAUMIK S K, DIVAKAR C, USHA DEVI S, et al. Synthesis and sintering of SiC under high pressure and high temperature[J]. J Mater Res, 1999, 14(3): 906–911.

[8] 谢茂林, 罗德礼, 鲜晓斌, 等. 无烧结助剂SiC陶瓷的高压烧结研究[J]. 中国陶瓷, 2009, 45(1): 19–22.

XIE Maolin, LUO Deli, XIAN Xiaobin, et al. China Ceram(in Cheinese), 2009, 45(1): 19–22.

[9] 鲜晓斌, 谢茂林, 罗德礼, 等. 纳米SiC陶瓷的超高压烧结研究[J]. 硅酸盐学报, 2009, 37(7): 1268–1272.

XIAN Xiaobin, XIE Maolin, LUO Deli, et al. J Chin Ceram Soc, 2009, 37(7): 1268–1272.

[10] 徐光亮, 宋春军, 曹林洪, 等. 超高压成型与无压烧结制备细晶碳化硅陶瓷[J]. 硅酸盐学报, 2008, 36(11): 1629–1632.

XU Guangliang, SONG Chunjun, CAO Linhong, et al. J Chin Ceram Soc, 2008, 36(11): 1629–1632.

[11] 铁健, 铁生年. 半导体制造业用微纳米碳化硅粉体制备工艺研究[J]. 材料导报B, 2016, 30(7): 88–91.

TIE Jian, TIE Shengnian. Mater Rev B(in Cheinese), 2016, 30(7): 88–91.

[12] 铁健, 铁生年. 微波酸碱处理微纳米碳化硅粉体杂质去除工艺研究[J]. 人工晶体学报, 2016, 45(9): 2311–2316.

TIE Jian, TIE Shengnian. J Synth Cryst(in Cheinese), 2016, 45(9): 2311–2316.

服务与反馈：

【文章下载】【加入收藏】