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用于微机电系统的铌掺杂锆钛酸铅薄膜制备及其机电特性
作者:狄杰建1 李明勇1 刘京京2 周添2 李欢2 谭晓兰1 宋维力3 赵全亮1 
单位:1. 北方工业大学机械与材料工程学院 北京 100144 2. 深圳光启高等理工研究院 广东 深圳 518057 3. 北京科技大学新材料技术研究院 北京 100083 
关键词:铌掺杂锆钛酸铅薄膜 微机电系统 溶胶?凝胶法 机电特性 
分类号:TQ174
出版年,卷(期):页码:2017,45(7):0-0
DOI:10.14062/j.issn.0454-5648.2017.07.15
摘要:

 采用溶胶?凝胶法在LaNiO3/Si衬底上制备了Nb0.02-Pb(Zr0.6Ti0.4)O3 (PNZT)薄膜及其驱动的微机电系统(MEMS)技术制作微悬臂梁器件,研究了PNZT薄膜及悬臂梁的机电特性。结果表明:该PNZT薄膜具有随机取向的钙钛矿相结构,铁电剩余极化强度和矫顽场分别约为20 C/cm2和27 kV/cm。通过压电响应力显微镜(PFM)和MEMS悬臂梁振动测试,计算得出PNZT薄膜的纵向压电系数d33和横向压电系数d31分别约为70 pm/V和90 pm/V,与已报道的外延生长PZT薄膜d33和d31值相当。同时MEMS悬臂梁在大气压下也表现出较小的机械损耗,一阶谐振时的机械品质因数Q值达到了122。表明该PNZT薄膜未来在高性能铁电和压电MEMS器件领域具有广泛的应用前景。

 

 Nb-doped lead zirconate titanate (Nb0.02-Pb(Zr0.6Ti0.4)O3, PNZT) films were prepared on the LaNiO3/Si substrates by a sol-gel method. The electromechanical characteristics were investigated by a PNZT film driving microcantilever, which was fabricated by a combined microelectromechanical system (MEMS). The silicon-based PNZT film is a perovskite structure with a random crystalline orientation, and its remnant polarization and coercive electric field are 20 C/cm2 and 27 kV/cm, respectively. According to the results obtained by piezoresponse force microscopy (PFM) and microcantilever vibration test, the longitudinal piezoelectric coefficient, d33, and transverse piezoelectric coefficient, d31, are calculated to be 70 pm/V and 90 pm/V, which are as high as those of the reported epitaxial PZT films. In atmospheric environment, the mechanical quality factor, Q, of the microcantilever is calculated to be 122 at first resonant frequency, showing a rather low mechanical dissipation of the microcantilever in the mechanical vibration. It is indicated that the PNZT film could have potential applications in high-performance ferroelectric and piezoelectric MEMS devices.

 
基金项目:
国家自然科学基金项目(51305005, 51375017),北京市自然科学基金委员会-北京市科学技术研究院联合资助项目(16L00001);深圳市海外高层次人才团队专项资金资助项目(KQE201106020031A)。
作者简介:
狄杰建(1974—),男,博士,讲师。
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