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AlN/Cu复合导热基板的界面结合特性及显微结构
作者：翟甜蕾1 林国安1 姚波1 丁毛毛1 谢建军1 施鹰1 李德善2 吴志豪2 
单位：1.上海大学材料科学与工程学院 上海 200444 2. 上海申和热磁电子有限公司 TE事业部 上海 200444 
关键词：氮化铝陶瓷 直接敷铜 结合性能 剥离强度 显微结构 
分类号：TQ174
出版年,卷(期):页码：2017,45(7):1037-1042
DOI：
摘要：

 对热压法与直接敷铜(direct bonded copper，DBC)法制备的2种不同界面状态的AlN/Cu基板进行了物相、形貌和成分及结合力(剥离强度)测试。结果表明：热压法所得复合基板在AlN陶瓷表面有一层约2 μm厚的Ti中间层，Ti不仅能与AlN反应生成Ti2N与Ti9Al23，又能与Cu形成Cu4Ti3合金，且Ti与AlN的结合力低于Ti与Cu的结合力；DBC法在AlN陶瓷表面氧化形成一层约2 μm厚的Al2O3层，Al2O3与Cu–O通过共晶液相反应形成CuAlO2，达到牢固结合，但由于Al2O3与AlN的热膨胀系数不匹配，Al2O3与AlN的结合力低于Al2O3与Cu的结合力；采用DBC法制备的AlN/Cu基板剥离强度(7.94 N/mm)较热压法(2.03 N/mm)高，约是热压法的4倍，且在使用过程中不易失效，适合于苛刻使用条件下的长期应用。

 

 AlN/Cu thermal conductive substrates were prepared via a hot-pressing method and a direct bonded copper (DBC) method，respectively. The crystal phase, morphology, composition and interface bonding (peel strength test) were characterized. The results show that in the hot -pressing method, there is a Ti layer with a thickness of 2 μm on the surface of AlN, Ti can react with AlN to generate Ti2N and Ti9Al23 and then react with Cu to generate Cu4Ti3 alloy. The adhesion strength between Ti and AlN is lower than that between Ti and Cu. In the DBC method, AlN is oxidized to form an Al2O3 layer with a thickness of 2 μm. The Al2O3 layer reacts with Cu-O eutectic liquid to generate CuAlO2, forming the strong combination. However, the bonding strength of Al2O3 and AlN is lower than that of Al2O3 and Cu due to the mismatch of thermal expansion between Al2O3 and AlN. AlN/Cu composite substrate prepared by the DBC method presents a peeling strength of 7.94 N/mm, which is approximately 4 times greater than that by the hot-pressing method (i.e., 2.03 N/mm) and is more suitable for the prolonged use.
基金项目：
上海市科委能力建设专项基金(14520500300)
作者简介：
翟甜蕾(1993―)，女，硕士研究生。
参考文献：

 [1] JARRIGE J, JOYEUX T, LECOMPTE J P, et al. Comparison between two processes using oxygen in the Cu/AlN bonding[J]. J Eur Ceram Soc, 2007, 27(2): 855–860.

[2] JARRIGE J, JOYEUX T, LECOMPTE J P, et al. Influence of oxygen on the joining between copper and aluminium nitride[J]. J Eur Ceram Soc, 2007, 27(1): 337–341.
[3] ENTEZARIAN M, DREW R A L. Direct bonding of copper to aluminum nitride[J]. Mater Sci Eng A, 1996, 212(2): 206–212.
[4] KARA–SLIMANE A, JUVE D, LEBLOND E, et al. Joining of AlN with metals and alloys[J]. J Eur Ceram Soc, 2000, 20(11): 1829–1836.
[5] IWASE N, ANZAI K, SHINOZAKI K, et al. Thick film and direct bond copper forming technologies for aluminum nitride substrate [J]. IEEE T Compon Hybrid Manuf, 1985, 8(2): 253–258.
[6] 许昕睿, 庄汉锐, 李文兰, 等. AlN陶瓷基板覆铜技术的研究[J].无机材料学报, 2003, 18(4): 837–842.
XU Xinrui, ZHUANG Hanrui, LI Wenlan, et al. J Inorg Mater(in Chinese), 2003, 18(4): 837–842.
[7] 谢进, 宗祥福. 氮化铝陶瓷覆铜基板的研制[J]. 硅酸盐学报, 2000, 28(4): 385–387
XIE Jin, ZONG Xiangfu. J Chin Ceram Soc, 2000, 28(4): 385–387.
[8] 郑精武, 陈思远, 陈淑文, 等. 一种氮化铝陶瓷板金属化的方法[P]. CN Patent, 103741141 B. 2016–03–02.
ZHENG Jingwu, CHEN Siyuan, CHEN Shuwen, et al. An aluminum nitride ceramic plate metallization methods (in Chinese). CN Patent, 103741141 B. 2016–03–02.
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