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化学包覆法制备Ho3+掺杂钛酸钡基X8R细晶陶瓷
作者:黄咏安 路标 唐振华 李丹丹 姚英邦 陶涛 梁波 鲁圣国 
单位:广东省智能材料和能量转化器件工程技术研究中心 广东省软物质重点实验室 广东工业大学材料与能源学院 广州 510006 
关键词:化学包覆法 氧化钬 钛酸钡 细晶陶瓷 “核–壳”结构 
分类号:TQ174.1
出版年,卷(期):页码:2017,45(9):0-0
DOI:
摘要:

采用化学包覆法将Ho2O3包覆在纳米级钛酸钡粉体表面,通过烧结将Ho3+扩散到钛酸钡晶粒中,调节其介电性能,研究了不同Ho3+掺杂量对BaTiO3基陶瓷相组成、微观结构和介电性能的影响。X射线衍射和扫描电子显微镜分析结果表明:Ho3+改性陶瓷样品均为赝立方相,Ho3+的加入能抑制晶粒生长,改善陶瓷微观结构,有利于制备均匀的细晶陶瓷。透射电子显微镜观察显示,包覆层的厚度约为2 nm,包覆Ho2O3有助于陶瓷烧结过程中形成“核–壳”结构晶粒,能显著改善钛酸钡基陶瓷的介电温度稳定性,提高绝缘电阻。当Ho3+掺杂量为2.0%时,陶瓷的相对介电常数为1 612,ΔC/C(–55~150 ℃)<±15%,满足EIA X8R电容器的温度特性。

 
基金项目:
国家自然科学基金委–广东省联合基金(U1501246);国家自然科学基金(51372042);广东省自然科学基金重大基础研究培育项目(2015A030308004)。
作者简介:
黄咏安(1991—),男,硕士研究生。
参考文献:
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