硅酸盐学报

化学包覆法制备Ho3+掺杂钛酸钡基X8R细晶陶瓷

作者：黄咏安路标唐振华李丹丹姚英邦陶涛梁波鲁圣国

单位：广东省智能材料和能量转化器件工程技术研究中心广东省软物质重点实验室广东工业大学材料与能源学院广州 510006

分类号：TQ174.1

出版年,卷(期):页码：2017,45(9):0-0

DOI：

摘要：

采用化学包覆法将Ho2O3包覆在纳米级钛酸钡粉体表面，通过烧结将Ho3+扩散到钛酸钡晶粒中，调节其介电性能，研究了不同Ho3+掺杂量对BaTiO3基陶瓷相组成、微观结构和介电性能的影响。X射线衍射和扫描电子显微镜分析结果表明：Ho3+改性陶瓷样品均为赝立方相，Ho3+的加入能抑制晶粒生长，改善陶瓷微观结构，有利于制备均匀的细晶陶瓷。透射电子显微镜观察显示，包覆层的厚度约为2 nm，包覆Ho2O3有助于陶瓷烧结过程中形成“核–壳”结构晶粒，能显著改善钛酸钡基陶瓷的介电温度稳定性，提高绝缘电阻。当Ho3+掺杂量为2.0%时，陶瓷的相对介电常数为1 612，ΔC/C(–55～150 ℃)＜±15%，满足EIA X8R电容器的温度特性。

基金项目：

国家自然科学基金委–广东省联合基金(U1501246)；国家自然科学基金(51372042)；广东省自然科学基金重大基础研究培育项目(2015A030308004)。

作者简介：

黄咏安(1991—)，男，硕士研究生。

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