首页期刊信息编委及顾问期刊发行联系方式使用帮助留言板ENGLISH
位置:首页 >> 正文
含铁氮化硅的氧化行为
作者: 
单位:1. 西北工业大学 超高温结构复合材料国防科技重点实验室 西安 710072 2. 内蒙合成化工研究所 呼和浩特 010010 
关键词:氮化硅 氮化硅铁 氧化 活化能 
分类号:
出版年,卷(期):页码:2017,45(9):0-0
DOI:
摘要:

 研究了含铁氮化硅陶瓷在1 300~1 500 ℃条件下空气中的氧化行为。结果表明:铁的存在会使氮化硅的氧化速率稍有提高,含铁氮化硅的氧化过程符合抛物线规律,氧化活化能为285 kJ/mol。元素面分布分析表明,氮化硅氧化过程中铁扩散到陶瓷表面,导致其抗氧化能力下降,但其空气中的抗氧化能力仍能满足高温下的应用需求。

 
基金项目:
国家自然科学基金重点项目(51632007)资助。
作者简介:
管甲锁(1964—),男,博士研究生。
参考文献:
[1] OGTAT S, HIROSAKI N, KOCER C, et al. A comparative ab initio study of the ‘ideal’ strength of single crystal α-and β-Si3N4[J]. Acta Mater, 2004, 52(1): 233–-238.
[2] OTANI T, HIRATA M. High rate deposition of silicon nitride films by APCVD[J]. Thin Solid Films, 2003, 442(1): 44–47.
[3] REEBER R. High temperature thermo–physical properties of some industrial ceramics and electronic materials[J]. Therm Conduct, 2005, 27: 525–537.
[4] ZHANG R F, SHENG S H, VEPREK S. Mechanical strengths of silicon nitrides studied by ab initio calculations[J]. Appl Phys Lett, 2007, 90(19): 191903.
[5] KITAYAMA M, HIRAO K, TORIYAMA M, et al. High hardness α-Si3N4 ceramics reinforced by rod-like β-Si3N4 seed particles[J]. J Ceram Soc Japan, 2000, 108(1259): 646–649.
[6] RILEY F L. Silicon nitride and related materials[J]. J Am Ceram Soc, 2000, 83(2): 245–265.
[7] ZIATDINOV M K, SHATOKHIN I M. Using ferrosilicon nitride of nitro-fesil grade in gate and spout components[J]. Refract Ind Ceram, 2008, 49(5): 383–387.
[8] KH ZIATDINOV M, SHATOKHIN I M. Self-propagating high-temperature synthesis of ferrosilicon nitride[J]. Steel Trans, 2008, 38(1): 39–44.
[9] WANG Y H, CHENG L F, GUAN J S, et al. Effect of dilution and additive on direct nitridation of ferrosilicon[J]. J Eur Ceram Soc, 2014, 34(5): 1115–1122.
[10] SINGHAL S C. Thermodynamics and kinetics of oxidation of hot-pressed silicon nitride[J]. J Mater Sci, 1976, 11(3): 500–509.
[11] OGBUJI L U J T, OPILA E J. A comparison of the oxidation kinetics of SiC and Si3N4[J]. J Electrochem Soc, 1995, 142(3): 925–930.
[12] HIRAI T, NIIHARA K, GOTO T. Oxidation of CVD Si3N4 at 1550 to 1650 oC[J]. J Am Ceram Soc, 1980, 63(7-8): 419–424.
[13] KIEHLE A J, HEUNG L K, GIELISSE P J, et al. Oxidation behavior of hot-pressed Si3N4[J]. J Am Ceram Soc, 1975, 58(1-2): 17–20.
[14] TRIPP W C, GRAHAM H C. Oxidation of Si3N4 in the Range 1300 to 1500 oC[J]. J Am Ceram Soc, 1976, 59(9/10): 399–403.
[15] LUTHRA K L. A mixed interface reaction/diffusion control model for oxidation of Si3N4[J]. J Electrochem Soc, 1991, 138(10): 3001–3007.
[16] DEAL B E, GROVE A S. General relationship for the thermal oxidation of silicon[J]. J Appl Phys, 1965, 36(12): 3770–3778.
[17] ZHANG Q T. Oxidation behavior and oxidation mechanism of Si3N4 ceramic materials[J]. J Nanjing Univ Chem Technol, 1991, 21(5): 9–12.
[18] OPSOMMER A, GOMEZ E, CASTRO F. Influence of TiC additions on the oxidation behavior of Si3N4-based ceramics[J]. J Mater Sci, 1998, 33(10): 2583–2588.
[19] KOMEYA K, HARUNA Y, MEGURO T, et al. Oxidation behavior of the sintered Si3N4–Y2O3–Al2O3 system[J]. J Mater Sci, 1992, 27(21): 5727–5734.
[20] WANG Y G, AN L N, FAN Y. Oxidation of polymer-derived SiAlCN ceramics[J]. J Am Ceram Soc. 2005, 88(11): 3075–3080.
[21] WANG Y G, FEI W, AN L N. Oxidation/corrosion of polymer-derived SiAlCN ceramics in water vapor[J]. J Am Ceram Soc, 2006, 89(3): 1079–1082.
[22] WANG Y G, FAN Y, ZhANG L, et al. Polymer-derived SiAlCN ceramics resist oxidation at 1 400 ℃[J]. Scr Mater, 2006, 55(4): 295–297.
服务与反馈:
文章下载】【加入收藏
中国硅酸盐学会《硅酸盐学报》编辑室
京ICP备10016537号-2
京公网安备 11010802024188号
地址:北京市海淀区三里河路11号    邮政编码:100831
电话:010-57811253  57811254    
E-mail:jccs@ceramsoc.com