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高压电活性 PNN–PZN–PBSZT 陶瓷的结构及性能
作者:    成炎炎 方必军 
单位:常州大学材料科学与工程学院 江苏 常州 213164 
关键词:陶瓷 压电性能 介电性能 
分类号:TM282
出版年,卷(期):页码:2017,45(12):1770-1775
DOI:10.14062/j.issn.0454-5648
摘要:

采用铌铁矿预合成及固相法制备 xPb(Ni1/3Nb2/3)O3–0.01Pb(Zn1/3Nb2/3)O3–(0.99–x)Pb0.82Ba0.08Sr0.10Zr0.56Ti0.44O3 (xPNN–PZN–PBSZT)压电陶瓷。研究了不同铌酸镍 NiNb2O6 含量(x=0、0.01、0.015、0.02)对 xPNN–PZN PBSZT 压电陶瓷的晶相结构以及压电和介电等性能的影响。结果表明:制备的压电陶瓷均为钙钛矿结构,处在准同型相界处,且随着 x 的增大,晶体结构逐渐向四方相转变。PNN 的引入可以提高 xPNN–PZN–PBSZT 陶瓷的压电、机电和介电性能,当 x=0.015 时,样品的综合性能最佳,压电性能和室温介电性能达到最大,d33和 εr分别达到 998 pC/N 和 5 498,此时的机电转换因子 kp 为 74.61%,Curie 温度 TC 为 140 ℃,kp的最大值出现在 x=0.02 处,为 76.26%。

xPb(Ni1/3Nb2/3)O3–0.01Pb(Zn1/3Nb2/3)O3–(0.99–x)Pb0.82Ba0.08Sr0.10Zr0.56Ti0.44O3(xPNN–PZN–PBSZT) piezoelectric ceramics were prepared via conventional ceramic processing with columbites as precursors. The influence of NiNb2O6 content on the phase structure,piezoelectric and dielectric properties was investigated. The xPNN–PZN–PBSZT ceramics that components are near the morphotropic-phase-boundary (MPB) exhibit a perovskite structure. The phase translates from tetragonal to rhombohedral structure as the x increases. The piezoelectric, mechanical and dielectric properties of xPNN–PZN–PBSZT ceramics are improved due to the introduction of PNN. The ceramics with x 0.015 show better piezoelectric properties. The piezoelectric constant, d33, relative permittivity, εr, the Curie temperature, Tc, and electromechanical coefficient, kp, of the ceramics are 998 pC/N and 5 498, 140℃ and 74.61%, respectively. However, the maximum kp is 76.26% as x=0.02.

基金项目:
国家自然科学基金(51577015)资助
作者简介:
陈 森(1993—),男,硕士研究生
参考文献:

[1] TURNER R C, FUIERER P A, NEWNHAM R E, et al. Materials for high temperature acoustic and vibration sensors: A review[J]. Appl Acoust, 1994, 41(4): 299–324.

[2] CHAO X, YANG Z, LI G, et al. Fabrication and characterization of low temperature sintering PMN–PZN–PZT step-down multilayer piezoelectric transformer[J]. Sensor Actuat A–Phys, 2008, 144(1): 117–123.
[3] TSUCHIYA K, KITAGAWA T, UETSUJI Y, et al. Fabrication of smart material PZT thin films by RF magnetron sputtering method in micro actuators[J]. Jsme Int J, 2006, 49(2): 201–208.
[4] SUN F P, CHAUDHRY Z, LIANG C, et al. Truss structure integrity identification using PZT sensor-actuator[J]. J Intel Mat Syst Str, 1994, 6(1): 134–139.
[5] SHIN H, AHN H, HAN D Y. Modeling and analysis of multilayer piezoelectric transformer[J]. Mater Chem Phys, 2005, 92(2–3): 616–620.
[6] KRAILAS M, ANIRUJ A, SUPATTRA S, et al. Low Temperature Fabrication of Lead-Free KNN–BNT Ceramics via the Combustion Technique[J]. Ferroelectrics, 2014, 458(1): 136–145.
[7] FARHI R, MARSSI M E, SIMON A, et al. A raman and dielectric study of ferroelectric Ba(Ti1–xZrx)O3 ceramics[J]. Phys Condens Mater, 1969, 9(4): 599–604.
[8] YAMATOH T, FUJIMORI H, KASATANI K. Variation of morphotropic phase boundary with the Bi deficiency on (Ba, Ce)-co-substituted sodium bismuth titanate[J]. Trans Mater Res Soc Jpn, 2016, 41(2): 169–173.
[9] 李月明, 刘虎, 沈宗洋, 等. ZnO 和 CuO 烧结助剂对 KNN 压电陶瓷 性能的影响[J]. 中国陶瓷, 2011(10): 28–31. LI Yueming, LIU Hu, SHEN Zongyang, et al. Chin Ceram(in Chinese), 2011(10): 28–31.
[10] HOLLENSTEIN E, DAMJANOVIC D, SETTER N. Temperature stability of the piezoelectric properties of Li-modified KNN ceramics[J]. J Eur Ceram Soc, 2007, 27(13): 4093–4097.
[11] 朱志雯, 黄新友, 花海堂, 等. 碱式碳酸钴掺杂量对 BCZT 无铅压电陶瓷性能和结构的影响[J]. 陶瓷学报, 2012, 33(4): 463–467.ZHU Zhiwen, HUANG Youxin, HUA haitang, et al. J Ceram(in Chinese), 2012, 33(4): 463–467.
[12] HE Chao, CHEN Wenge. Fabrication and research and applicationof piezoelectric materials[J]. J Func Mater, 2010, 41(s1): 11–13.
[13] ZHAO L Y, HOU Y D, CHANG L M, et al. Microstructure and electrical properties of 0.5PZN–0.5PZT relaxor ferroelectrics close to the morphotropic phase boundary[J]. J Mater Res, 2009, 24(6): 2029–2034.
[14] CHAO X, YANG L, PAN H, et al. Fabrication, temperature stability and characteristics of Pb(ZrxTiy)O3–Pb(Zn1/3Nb2/3)O3–Pb(Ni1/3Nb2/3)O3, piezoelectric ceramics bimorph[J]. Ceram Int, 2012, 38(4): 3377–3382.
[15] LI H, LIU J, YU H, et al. Relaxor behavior and Raman spectra of CuO-doped Pb(Mg1/3Nb2/3)O3–PbTiO3, ferroelectric ceramics[J]. J Adv Ceram, 2014, 3(3): 177–183.
[16] SEBALD G, BENAYAD A, QIU J. Electromechanical characterization of 0.55Pb(Ni1⁄3Nb2⁄3)O3–0.45Pb(Zr0.3Ti0.7)O3 fibers with Pt core[J]. J Appl Phys, 2006, 100(5): 475. [17] BRAJESH K, HIMANSHU A K, SHARMA H, et al. Structural, dielectric relaxation and piezoelectric characterization of Sr2+, substituted modified PMS-PZT ceramic[J]. Phys B, 2012, 407(407): 635.
[18] KIM J M, KIM J S, CHEON C I. Low-temperature sintering and electrical properties of PGO-doped PNN–PZT ceramics[J]. J Ceram Process Res, 2011, 12(1): 12–15.
[19] CHU S Y, HSIEH C S. Doping effects on the piezoelectric properties of low-temperature sintered PNN–PZT-based ceramics[J]. J Mater Sci Lett, 2000, 19(7): 609–612.
[20] 杜建周, 裘进浩, 朱孔军, 等. 碳酸锂掺杂对 PFN–PNN–PZT 陶瓷 微结构和电学性能的影响[J]. 硅酸盐学报, 2014, 42(2): 203–209. DU Jianzhou, QIU Jinhao, ZHU Kongjun, et al. J Chin Ceram Soc, 2014, 42(2): 203–209.
[21] 孙华君, 刘晓芳, 陈文, 等. Sr 取代量对 PMNS–PZT 压电陶瓷的影响[J]. 电子元件与材料, 2007, 26(7): 7–10. SUN Huajun, LIU Xiaofang, CHEN Wen, et al. Electr Comp Mater (in Chinese), 2007, 26(7): 7–10.
[22] CHENG L Q, ZHOU J J, KE W, et al. Influence of ball milling on sintering behavior and electrical properties of (Li, Na, K)NbO3 lead-free piezoceramics[J]. J Mater Sci, 2012, 47(19): 6908–6914.
[23] LI B S, LI G R, YIN Q R, et al. Pinning and depinning mechanism of defect dipoles in PMnN–PZT ceramics[J]. J Phys D Appl Phys, 2005,38(8): 1107.
[24] SHROUT T R, ZHANG S. Lead-free piezoelectric ceramics: Alternatives for PZT[J]. J Electroceram, 2007, 19(1): 185–185.
[25] SAITO Y, TAKAO H, TANI T, et al. Lead-free piezoceramic[J]. Nature, 2004, 432(7013): 84–87.
[26] WANG X, WU J, XIAO D, et al. Large d33 in (K, Na) (Nb, Ta, Sb)O3–(Bi, Na, K)ZrO3 lead-free ceramics[J]. J Mater Chem A, 2014, 2(12): 4122–4126.
[27] ISLAM R A, PRIYA S, AMIN A. Mn-doping effect on dielectric and electromechanical losses in the system Pb(ZrxTi1−x)O3–Pb(Zn1/3Nb2/3) O3[J]. J Mater Sci, 2007, 42(24): 10052–10057.
[28] HOU Y D, LU P X, ZHU M K, et al. Effect of Cr2O3 addition on the structure and electrical properties of Pb((Zn1/3Nb2/3)0.20(Zr0.50Ti0.50)0.80) O3 ceramics[J]. Mater Sci Eng B, 2005, 116(1): 104–108.
[29] CHENG C, ZHENG D Y, PENG G G, et al. The effects of Sm2O3, doping on properties of PNN–PZT ceramics near morphotropic phase boundary[J]. J Mater Sci–Mater El, 2017, 28(2): 1624–1630.
[30] JIA Z, REN T L, LIU T Z, et al. Study on oxidization of Ru and its application as electrode of PZT capacitor for FeRAM[J]. Mater Sci Eng B, 2007, 138(3): 219–223.
[31] KALEM V, ?BRAHIM Çam, IMUÇIN M. Dielectric and piezoelectric properties of PZT ceramics doped with strontium and lanthanum[J].Ceram Int, 2011, 37(4): 1265–1275.
[32] MAHAJAN S, THAKUR O P, PRAKASH C. Effect of sintering temperature on structural and piezoelectric properties of PNN–PZT ceramics[J]. Def Sci J, 2007, 57(1): 23–28.
[33] HU H, ZHU M, XIE F, et al. Effect of Co2O3 additive on structure and electrical properties of 85(Bi1/2Na1/2)TiO3–12(Bi1/2K1/2)TiO3–3BaTiO3, lead-free piezoceramics[J]. J Am Ceram Soc, 2009, 92(9): 2039–2045. 
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