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掺杂对二氧化锡薄膜光电性能的影响
作者:王立坤1 郁建元1 2 王丽1 牛孝友1 付晨1 邱茹蒙1 晏伟静1 赵洪力1 
单位:1. 燕山大学材料科学与工程学院 河北 秦皇岛 066004 2. 唐山学院环境与化学工程系 河北 唐山 063000 
关键词:二氧化锡薄膜 掺杂 导电机制 散射机理 光电性能 
分类号:TB43
出版年,卷(期):页码:2018,46(4):0-0
DOI:
摘要:
二氧化锡(SnO2)是一种重要的透明导电金属氧化物半导体材料,掺杂可使其光电性能得到显著改善,拓展其应用领域。分析了SnO2薄膜的导电机制、载流子散射机理及近年来国内外学者对不同类型掺杂的SnO2薄膜的研究。掺杂引入的缺陷能级增加了载流子浓度,提高了薄膜的导电性。杂质离子散射和晶界散射是影响薄膜载流子迁移率的主要散射机制。光电性能严重依赖于掺杂元素的种类及掺杂量,多元共掺杂是极具发展潜力的方法。
 
 
 
基金项目:
基金项目:国家重点研发计划资助项目(NO. 2016YFB0303902);河北省应用基础研究计划重点基础研究资助项目(17961109D)。
作者简介:
第一作者:王立坤(1991—),男,博士研究生。
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