首页期刊信息编委及顾问期刊发行联系方式使用帮助留言板ENGLISH
位置:首页 >> 正文
上电极对镧镍共掺铁酸铋薄膜电学性质的影响
作者:彭增伟1 刘保亭2 
单位:(1. 华北电力大学科技学院 河北 保定 071051 2. 河北大学物理科学与技术学院 河北 保定 071002) 
关键词:铁酸铋薄膜 镧镍共掺 上电极 电学性质 
分类号:O472+.4
出版年,卷(期):页码:2018,46(7):0-0
DOI:
摘要:

采用溶胶?凝胶法在Pt(111)/Ti/SiO2/Si(001)基片上制备了La和Ni共掺的多晶Bi0.975La0.025Fe0.975Ni0.025O3(BLFNO)薄膜,分别以氧化铟锡(ITO)和Pt/SrRuO3(SRO)为上电极构建了ITO/BLFNO/Pt和SRO/BLFNO/Pt两种电容器。研究了两种上电极对BLFNO薄膜电学性质的影响。当测试电场为1 333 kV/cm时,ITO/BLFNO/Pt和SRO/BLFNO/Pt电容器的剩余极化强度分别为105和139 μC/cm2。通过拟合两种电容器的电流密度,发现导电机理都为Poole-Frankel机制。当404 nm的紫光入射到两种电容器表面,电流密度都相应的增大。测试电场为250 kV/cm时,ITO/BLFNO/Pt电容器电流密度增长量为6.55×10?4 A/cm2;而SRO/BLFNO/Pt电容器的增长量为1.38×10?4 A/cm2。

基金项目:
作者简介:
参考文献:
[1] WANG. J, NEATON. J. B, ZHENG. H, et al. Epitaxial BiFeO3 multiferroic thin film heterostructures[J]. Science, 2003, 299: 1719?1722.
[2] YUN K Y, NODA M, OKUYAMA M. Prominent ferroelectricity of BiFeO3 thin films prepared by pulse-laser deposition[J]. Appl Phys Lett, 2003, 83: 3981?3983.
[3] YUN K Y, RICIACHI D, KANASHIMA T. Enhancement of electrical and properties in polycrystalline BiFeO3 thin films[J]. Appl Phys Lett, 2006, 89: 192902.
[4] RICIACHI D, YUN K Y, OKUYANA M. First-principles study of BiFeO3 thin films with giant polarization and its dependence on structural parameters[J]. Ferroelectrics, 2006, 335(1): 181?190.
[5] KADOMTSEVA A M, POPOV Y F, PYATAKOV A P, et al. Phase transitions in multiferroic BiFeO3 crystals, thin-layer, and ceramics: enduring potential for a single phase, room-temperature magnetoelectric “holygrail,”[J]. Cheminform, 2007, 38(23): 1019?1042.
[6] MATSUO H, KITANAKA Y, INOUE R, et al, Cooperative effect of oxygen-vacancy-rich layer and ferroelectric polarization on photovoltaic properties in BiFeO3 thin film capacitors[J]. Appl Phys Lett, 2016, 108: 032901.
[7] SINGH S K, ISHIWARA H, MARUYAMA K. Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited Pt electrodes using chemical solution deposition[J]. Appl Phys Lett, 2006, 88: 262908.
[8] GAO R L, YANG H W, CHEN Y S, et al, Oxygen vacacies induced switchable and nonswitchable photovoltaic effects in Ag/Bi0.9La0.1FeO3/La0.7Sr0.3MnO3 sandwiched capacitors[J]. Appl Phys Lett, 2014, 104: 031906.
[9] GRPTA S, TOMAR M, GUPTA V. Ferroelectric photovoltaic properties of Ce and Mn codoped BiFeO3 thin film[J]. J Appl Phys, 2014, 115: 014102.
[10] QI X, DHO J, TOMOV R. Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO3[J]. Appl Phys Lett, 2005, 86: 062903.
[11] WANG X, HU G, CHEN L, et al, Comparative study on aging effect in BiFeO3 thin films substituted at A- and B-sites[J]. Appl Phys Lett, 2011, 99: 262901.
[12] PABST G W, MARTIN L W, CHU Y H, et al. Leakage mechanism in BiFeO3 thin films[J]. Appl Phys Lett, 2007, 90: 072902.
[13] 彭增伟, 姜庆华, 朱慧娟, 等. 紫光对外延掺锰铁酸铋薄膜物性的影响[J]. 人工晶体学报, 2014, 43(4): 898?902.
PENG Zengwei, JIANG Qinghua, ZHU Huijuan, et al. J Synth Cryst (in Chinese), 2014, 43(4): 898?902.
[14] SINGH S K, MRUYAMA K, ISHIWARA H. Reduced leakage current in La and Ni co-doped BiFeO3 thin films[J]. Appl Phys Lett, 2007, 91: 112913.
[15] CHEN Y C, KO C H, HUANG Y C, et al. Domain relaxation dynamics in epitaxial BiFeO3 films: role of surface charges[J]. J Appl Phys, 2012, 112: 052107.
[16] ZHU X H, BEA H, BIBES M, et al. Thichness-dependent structural and electrical properties of multiferroic Mn-doped BiFeO3 thin films grown epitaxially by pulsed laser deposition[J]. Appl Phys Lett, 2008, 93: 082902.
[17] KHAN M A, COMYN T P, BELL A J. Leakage mechanisms in bismuth ferrite-lead titanate thin films on Pt/Si substrates[J]. Appl Phys Lett, 2008, 92(7): 072908.
[18] GUO Y, GUO B, DONG W, et al. Evidence for oxygen vacancy or ferroelectric polarization induced switchable diode and photovoltaic effects in BiFeO3 based thin film[J]. Nanotechnology, 2013, 24: 275201.
[19] BHATNAGAR A, KIM Y H, HESSE D, et al. Persistent photoconductivity in strained epitaxial BiFeO3 thin film[J]. Nano Lett, 2014, 14: 5224?5228.
 
服务与反馈:
文章下载】【加入收藏
中国硅酸盐学会《硅酸盐学报》编辑室
京ICP备10016537号-2
京公网安备 11010802024188号
地址:北京市海淀区三里河路11号    邮政编码:100831
电话:010-57811253  57811254    
E-mail:jccs@ceramsoc.com