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金属–半导体–金属结构非极性a-AlGaN 深紫外探测器的制备
作者:贾辉1 徐建飞1 石璐珊2 梁征1 张滢3 
单位:1. 公安海警学院基础部 浙江 宁波 315801  2. 宁波科技信息研究院研究中心 浙江 宁波 315040  3. 海纳国际集团 费城 PA19004 美国 
关键词:深紫外探测器 二氧化硅纳米颗粒 非极性a 面铝镓氮 金属–半导体–金属结构 
分类号:TN304.2
出版年,卷(期):页码:2018,46(9):0-0
DOI:10.14062/j.issn.0454-5648.2018.09.18
摘要:

 通过金属有机化学气相沉积(MOCVD)高温外延生长的未掺杂非极性a-AlGaN 半导体薄膜,制备了金属–半导体–金

属(MSM)结构的深紫外光电探测器,研究了在a-AlGaN 半导体薄膜表面磁控溅射不同时间的SiO2 纳米颗粒对a-AlGaN MSM
结构的深紫外探测器性能的影响。结果表明:5 V 偏压下,探测器光谱响应峰值提高了大约3 个数量级,深紫外近可见抑制
比高达104, 具有很好的深紫外特性,同时暗电流也下降了2~3 个数量级,磁控溅射SiO2 纳米颗粒提升了a-AlGaN MSM 结
构深紫外探测器性能。
基金项目:
作者简介:
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