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SiC籽晶上生长AlN单晶的杂质组成及处理
作者:  齐海涛 程红娟   史月增 
单位:(中国电子科技集团公司第四十六研究所 天津 300220) 
关键词:氮化铝单晶 碳化硅籽晶 杂质组成 杂质处理 
分类号:TN304.2
出版年,卷(期):页码:2019,47(1):0-0
DOI:10.14062/j.issn.0454-5648.2019.01.03
摘要:

 采用物理气相传输法在SiC异质籽晶上制备了AlN单晶。通过Raman光谱仪、X射线衍射仪、二次离子质谱仪和X射线光电子能谱研究了AlN单晶的结晶质量和杂质成分,针对不同的杂质成分提出了相应的处理方式。结果表明:C、O为AlN单晶中的主要杂质元素,其中C元素为非故意掺杂,与AlN单晶的生长环境密切相关,随着生长晶体厚度的增加,C杂质元素的含量逐渐降低。而O元素除了源粉和生长系统中吸附氧外,还与抛光过程中形成的氧化物层有关;经腐蚀和退火处理,AlN表面氧化物的含量大幅降低,N/Al摩尔比接近1;经杂质处理后的AlN单晶片可作为同质生长的籽晶。

 AlN single crystal was grown on SiC heterogeneous seeds by a physical vapor transport (PVT) method. The crystal quality and impurity composition of AlN single crystal were investigated by Raman spectrometer, X-ray diffractometer, secondary ion mass spectrometer and X-ray photoelectron spectroscope, respectively. Some methods to treat different impurities were proposed. The results show that the major impurities are carbon and oxygen. The non-intentionally doped carbon impurity is closely related to the growth system of AlN crystal. However, the content of carbon impurity gradually reduces with increasing the crystal thickness. Except for the introduction from AlN raw materials and absorbed oxygen in the system, the oxygen impurity is mainly originated from the oxide thin layer, forming in the polishing process. The content of oxygen is dramatically decreased when the polished AlN wafer is treated via acid corrosion and thermal annealing treatment. The molar ratio of nitrogen and aluminum in AlN crystal is close to 1, favoring that the polished AlN wafer can be used as the seeds for the homogenesis growth.

基金项目:
国家重点研发计划项目(2017YFB0404103);国家自然科学基金项目(51702297);天津市第二批特支计划高层次创新创业团队支持项目
作者简介:
参考文献:

 [1] TWEEDIE J, COLLAZO R, RICE A, et al. Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates[J]. Phys Status Solidi C, 2012, 9(3/4) : 584–587.

[2] LU P, COLLAZO R, DALMAU R F, et al. Seeded growth of AlN bulk crystals in m- and c-orientation[J]. J Cryst Growth, 2009, 312: 58–63.
[3] SUMATHI R R. Native seeding and silicon doping in bulk growth of AlN single crystals by PVT method[J]. Phys Status Solidi C, 2014, 11(3/4): 545–548.
[4] HARTMANN C, DITTMAR A, WOLLWEBER J, et al. Bulk AlN growth by physical vapour transport[J]. Semicond Sci Technol, 2014, 29: 084002(1–10).
[5] CHEMEKOVA T Y, AVDEEV O V, BARASH I S, et al. Sublima-tion growth of 2 inch diameter bulk AlN crystals[J]. Phys Status Solidi C, 2008, 5(6): 1612–1614.
[6] BALKA C M, SITAR Z, ZHELEVA T, et al. Sublimation growth and characterization of bulk aluminum nitride single crystals[J]. J Cryst Growth, 1997, 179: 363–370.
[7] 齐海涛, 洪颖, 王香泉, 等. 物理气相传输法制备大面积AlN单晶[J]. 硅酸盐学报, 2013, 41(6): 803–807.
QI Haitao, HONG Ying, WANG Xiangquan, et al. J Chin Ceram Soc, 2013, 41(6): 803–807.
[8] DALMAU R, SCHLESSER R, SITAR Z. Polarity and morp-hology in seeded growth of bulk AlN on SiC[J]. Phys Status Solidi C, 2005, 2(7): 2036–2039.
[9] DALMAU R, OLLAZO R, MITA S, et al. X-Ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution[J]. J Electron Mater, 2007, 36(4): 414–419.
[10] BRYAN I, AKOUALA C R, TWEEDIE J, et al. Surface prepara-ion of non-polar single-crystalline AlN substrates[J]. Phys Status Solidi C, 2014, 11(3/4): 454–457.
 
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