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不同激光波长和功率下的Bi2Se3单晶Raman光谱
作者:    曾体贤 安辛友 刘其娅       
单位:(西华师范大学物理与空间科学学院 四川 南充 637002) 
关键词:硒化铋单晶 Raman光谱 激光光源 声子振动模式 
分类号:TB30
出版年,卷(期):页码:2019,47(4):0-0
DOI:
摘要:

 采用改良Bridgman法制备出优质Bi2Se3单晶。X射线衍射仪和扫描电子显微镜测试结果显示,晶体沿[001]方向生长,结晶性能好。采用两种波长(532和785 nm)及不同功率的激光光源,对Bi2Se3单晶体(003)面进行了Raman光谱研究。结果表明:在功率较高时,随着激光功率的增加,Raman特征峰系统性红移和半高宽增大,此时峰位红移是由激光功率的增加,测试区域温度升高,晶格膨胀和声子间的非简谐振动耦合共同导致;在功率较低时,热膨胀可能是造成Raman峰位红移的主要原因。

  High-quality Bi2Se3 single crystal was prepared by a modified Bridgman method. Based on the analysis by X-ray diffraction and scanning electron microscopy, the crystal is grown along the [001] direction with a good crystallinity. The Raman spectra of Bi2Se3 single crystal (003) face were investigated by using two wavelengths (i.e., 532 nm and 785 nm) and different power laser sources. At a high power, the systematic red shift of Raman characteristic peaks is caused due to the combination of lattice expansion and non-harmonic vibration coupling between phonons. At a low power, the thermal expansion may be the main reason for the red shift of the Raman peak.

基金项目:
西华师范大学英才科研基金项目(17YC520);教育部“春晖计划”合作科研项目(Z2017093)。
作者简介:
参考文献:

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