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氧化镓晶体不同晶面的纳米力学性能
作者:    韦嘉辉 李永康 
单位:(盐城工学院机械工程学院 江苏 盐城 224051) 
关键词:氧化镓晶体 纳米压痕 纳米划痕 力学性能 塑性域加工 
分类号:O731; TH161
出版年,卷(期):页码:2020,48(1):0-0
DOI:
摘要:

 为了分析易解理的脆性氧化镓晶体的精密加工过程中材料去除机理,采用金刚石压头、G200型纳米压痕仪,分别对氧化镓晶体的(100)和(010) 2个主要晶面的纳米力学性能进行了试验研究。纳米压痕试验发现:2个晶面都有“pop-in”现象,首次出现pop-in的载荷分别为:4.31 mN和5.42 mN。通过变载荷纳米划痕试验和VK-X110激光显微系统观测,发现2个晶面都有“pile-up”现象,刻划过程中期均出现了塑性域加工特征,(100)和(010)晶面的塑性域加工切削深度范围分别是96.5~576.8 nm和84.6~421.6 nm。

基金项目:
国家自然科学基金(51675457)项目。
作者简介:
参考文献:

 

 
[1]SASAKI K, HIGASHIWAKI M, KURAMATA A, et al. Ga2O3 Schottky barrier diodes fabricated on single-crystal β-Ga2O3 substrates[J]. IEEE Electron Device Lett, 2013, 34(4): 493?495.
[2]GREEN A J, CHABAK K D, HELLER E R, et al. 3.8-MV/cm breakdown strength of MOVPE-grown Sn-doped, β-Ga2O3 MOSFETs[J]. IEEE Electron Device Lett, 2016, 37(7): 902?905.
[3]ENCARNACIÓN G. VÍLLORA, ARJOCA S, SHIMAMURA K, et al. β-Ga2O3 and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga2O3 potential for next generation of power devices[J]. Proc SPIE Int Soc Opt Eng, 2014, 8987: 89871U (1–12).
[4]NIKOLAEV V I, MASLOV V, STEPANOV S I, et al. Growth and characterization of β-Ga2O3 crystals[J]. J Cryst Growth, 2017, 457: 132?136.
[5]ASGHAR K, QASIM M, NELABHOTLA D M, et al. Effect of surfactant and electrolyte on surface modification of c-plane GaN substrate using chemical mechanical planarization (CMP) process[J]. Colloids Surf A: Physicochem Eng Aspects, 2016, 497: 133?145.
[6]TAO Xutang. Bulk gallium oxide single crystal growth[J]. J Semicond, 2019, 40(1): 9?10.
[7]BALDINI M, GALAZKA Z, WAGNER G, et al. Recent progress in the growth of β-Ga2O3 for power electronics applications[J]. Mater Sci Semicond Process, 2017, 78(2): 132?146.
[8]GAO Shang, WU Yueqin, KANG Renke, et al. Nanogrinding induced surface and deformation mechanism of single crystal beta-Ga2O3[J]. Mater Sci Semicond Process, 2018, 79: 165?170.
[9]WU Yueqin, GAO Shang, HUANG Han, et al. The deformation pattern of single crystal β-Ga2O3 under nanoindentation[J]. Mater Sci Semicond Process, 2017: 71: 321?325.
[10]VÍLLORA Encarnación G, SHIMAMURA Kiyoshi, YOSHIKAWA Yukio, et al. Large-size β-Ga2O3, single crystals and wafers[J]. J Cryst Growth, 2004, 270(3/4): 420?426.
[11]高岳毅, 张亚梅, 胡传林, 等. 用纳米压痕复合扫描电子显微镜分析水泥砂浆中单一组相的力学性能(英文)[J]. 硅酸盐学报, 2012, 40(11): 1559?1563. 
GAO Yueyi, ZHANG Yamei, HU Chuanlin, et al. J Chin Ceram Soc, 2012, 40(11): 1559?1563.
[12]MU Wenxiang, JIA Zhitai, YIN Yanru, et al. High quality crystal growth and anisotropic physical characterization of β-Ga2O3 single crystals grown by EFG method[J]. J Alloy Compd, 2017: 714: 453?458.
[13]柯瑞. 辐照/压痕载荷/表面图形化条件下蓝宝石单晶性能研究[D]. 哈尔滨: 哈尔滨工业大学, 2014. 
KE Rui. Research on properties of sapphire single crystal under irradiation/indentation load/surface patterning (in Chinese, dissertation). Harbin: Harbin Institute of Technology, 2014.
[14]QU Zhaoliang, ZHANG Qiang, HE Rujie, et al. Characterization of oxidation film on SiC ceramic substrate based on indentation method[J]. Ceram Int, 2016, 43(5): 4399?4404.
[15]GRUBER M, LEITNER A, KIENER D, et al. Incipient plasticity and surface damage in LiTaO3, and LiNbO3, single crystals[J]. Mater Des, 2018, 153: 221?231.
[16]YAO Weizhi, YOU J H. Berkovich nanoindentation study of monocrystalline tungsten: a crystal plasticity study ofsurface pile-up deformation[J]. Philos Mag, 2017, 97(17): 1418?1435.
[17]徐连勇, 张舒婷, 荆洪阳, 等. Ag-GNSs/SnAgCu钎料纳米压痕变形行为研究[J]. 机械工程报, 2018, 54(8): 151?156.
XU Lianyong, ZHANG Shuting, JING Hongyang, et al. J Mech Eng (in Chinese), 2018, 54(8): 151?156.
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