硅酸盐学报

Sm3+掺杂SrBi4Ti4O15–Bi4Ti3O12压电陶瓷的结构、电学和光致发光性能

作者：刘芳江向平陈超黄枭坤聂鑫胡浩苏春阳陈云婧

单位：(景德镇陶瓷大学材料科学与工程学院江西省先进陶瓷材料重点实验室江西景德镇 333001)

关键词：压电陶瓷 Raman光谱晶格畸变光致发光

分类号：TQ174.1

出版年,卷(期):页码：2020,48(3):0-0

DOI：

摘要：

采用固相法制备Sm3+掺杂SrBi8–xSmxTi7O27 (SBT–BIT–xSm3+, 0≤x≤0.50)共生铋层状陶瓷，研究了不同掺杂量的Sm3+对样品的结构、介电、压电以及光致发光性能的影响。结果表明：所有陶瓷样品均为单一的共生铋层状结构，XRD精修和Ramam结果显示Sm3+掺杂引起样品晶格畸变的减小，适量的Sm3+掺杂降低了介电损耗tanδ，提升了压电常数d33，当x=0.30时，综合电性能最佳：压电常数d33=16.3 pC/N，tanδ=0.90%。在407 nm近紫外光的激发下，SBT–BIT–xSm3+陶瓷样品在 598 nm处存在最强的红橙光发射，当x=0.15时，发光强度达到最佳，Sm3+掺杂SBT–BIT共生铋层状陶瓷在光-电多功能器件等领域中具有潜在的应用前景。

Sm3+ doped SrBi8–xSmxTi7O27(SBT–BIT–xSm3+, 0≤x≤0.50) inter-growth bismuth layer–structured ceramics were prepared by a conventional solid-state method. The effect of Sm3+ doping on the structural, electrical and photoluminescence properties of SBT–BIT–xSm3+ ceramics were investigated. All the samples show a single inter–growth bismuth layer–structure. Based on the results by the Rietveld analysis and Raman spectroscopy, the lattice distortion decreases. The dielectric loss (tanδ) decreases and piezoelectric constant (d33) increases with the increase of Sm3+ doping content. SBT–BIT–xSm3+ ceramic with x of 0.30 exhibits an optimum electrical behavior, i.e., d33=16.3 pC/N, and tanδ=0.90%. Moreover, Under a near ultraviolet excitation at 407 nm, a most intense red orange emission appears at 598 nm in SBT–BIT–xSm3+ ceramics. The optimized emission intensity was obtained when x=0.15 for SBT-BIT-xSm3+ ceramic. The results show that Sm3+ doped SBT–BIT–xSm3+ inter–growth bismuth layer–structured ceramics have potential applications in the field of optoelectronic multifunctional devices.

基金项目：

国家自然科学基金(51762024, 51562014, 51862016, 51602135)、江西省自然科学基金(20171BAB216012)、江西省教育厅科技项目(GJJ170789, GJJ170804, GJJ180718, GJJ170794)资助。

作者简介：

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