硅酸盐学报

膜厚与紫外光辐照对反应溅射法制备的F掺杂SnO2薄膜结构与光电性能的影响

作者：祝柏林宋肖肖陶冶易昌鸿吴隽

分类号：TN304

出版年,卷(期):页码：2020,48(4):0-0

DOI：

摘要：

摘要：以Sn+SnF2为靶材，在衬底温度为150和300 ℃通过反应磁控溅射法制备了厚度为20~400 nm的F掺杂SnO2(FTO)薄膜，并通过紫外光(UV)辐照对2种厚度(20和240 nm)的样品进行了后处理，研究了膜厚和UV辐照时间对薄膜结构与透明导电性能的影响。结果表明：随着膜厚或衬底温度的增加，FTO薄膜结晶度提高，但择优取向保持为(211)面；与此同时，薄膜中压应力增大，而导电性能下降。随着膜厚的增加，薄膜透光性先降低后增加，而其禁带宽度(Eg)先明显增加后趋于稳定。增大衬底温度可增大薄膜的透光性和Eg。UV辐照可明显提高薄膜的载流子浓度，从而增强薄膜的导电性能，但对薄膜的透光性无明显改变。另外，讨论了膜厚引起FTO薄膜结构及光电性能变化的相关机制，分析了UV辐照对FTO薄膜光电性能的改善机理。

基金项目：

湖北省大学生创新创业训练计划项目(201610488042)。

作者简介：

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